Solar cell with front side free of electrode shielding and preparation method thereof

Abstract

The invention discloses a solar cell with the front side free of electrode shielding and a preparation method thereof, and belongs to the field of solar cell preparation. The cell is characterized in that sintered P-type silicon is arranged on the front side of an N-type silicon substrate, the N-type silicon substrate and the P-type silicon form a PN junction, an ITO (indium tin oxide) light-transmitting conducting film is covered on the surface of the P-type silicon, and extraction electrodes formed by screen-printed electrodes are arranged on the side faces and the back of the N-type silicon substrate. The electrode on the front side of the substrate is transferred to the back to enable the front side of the solar cell to be free of metal and connection point shielding, so that electrode shielding of incident light is reduced to the utmost extent, utilization rate of cells is increased, and assembling and mounting processes of the cell are simplified by the back coplanar electrode. Besides, the light-transmitting conducting film, the PN junction of the solar cell, the front side screen-printed electrode, the side face screen-printed electrodes and the back screen-printed electrode are completed at a time by adopting the high-temperature sintering diffusion technology, and intermediate processes and unnecessary material consumption are reduced greatly.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a solar cell with no electrode shielding on the front and a preparation method thereof. Background technique [0002] A solar cell is a device that converts solar energy into electricity. According to the different materials used, it can be divided into silicon-based solar cells, compound semiconductor solar cells, and polymer material cells. For silicon and compound semiconductor materials, PN junctions are formed by different doping. Generally speaking, the distance between the PN junction and the surface of the semiconductor solar cell will not exceed one μm. When light is irradiated on a PN junction solar cell, photons larger than the band gap of the semiconductor material will be absorbed, and free electrons (holes) will be excited inside the material, also called photogenerated carriers. If these excited electrons (holes) are located within a diffusion length of the...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the present invention is a solar battery sheet without electrode shielding on the front and its preparation method, which will not be blocked by electrodes on the front of the solar battery sheet, and can solve the problem that the photoelectric conversion efficiency is affected by the shielding of electrodes on the front of the solar battery sheet currently prepared

Images