Preparation method of transparent conductive oxide film

An oxide film, transparent and conductive technology, applied in the field of solar cells, can solve the problems of affecting the conversion efficiency of solar cells, increasing the cost of film preparation, and poor film compactness, so as to improve the open circuit voltage and filling effect, mobility and light transmittance Effect of improvement, conversion efficiency improvement

Active Publication Date: 2016-12-28
YINGLI GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the existing methods for preparing TCO thin films, when only high power is used to prepare TCO thin films, there will be problems such as high grain boundary density and poor film compactness, which seriously affect the conversion efficiency of solar cells.
However, when only low power is used to prepare TCO thin films, the yield of thin films will be reduced due to the low deposition rate, and the cost of thin film preparation will increase.

Method used

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  • Preparation method of transparent conductive oxide film
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  • Preparation method of transparent conductive oxide film

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preparation example Construction

[0026] Based on this, the present invention provides a method for preparing a transparent conductive oxide film, which is applied to magnetron sputtering equipment to overcome the above-mentioned problems in the prior art, including: using the first power to prepare the first A thin film; using a second power to prepare a second thin film on the first thin film; wherein, the second power is greater than the first power.

[0027] The preparation method of the transparent conductive oxide film provided by the present invention first adopts low power to prepare a layer of TCO film. During this process, the energy of the sputtered particles is low, and the damage to the substrate is small, and the prepared film is smooth and dense. Uniform, and a good interface is formed between the TCO film prepared by low power and the substrate, which reduces the defect density of the interface, improves the open circuit voltage and filling effect, and the TCO film prepared by low power plays a ...

Embodiment 1

[0033] The flow chart of the preparation method of the transparent conductive oxide film disclosed in this embodiment is as follows figure 1 As shown, it is applied to magnetron sputtering equipment, and the specific steps are as follows:

[0034] Step 101: Using the first power, prepare a first film on the substrate.

[0035] Wherein, the first power is 1W-500W, inclusive, the thickness of the first thin film is 3nm-20nm, inclusive, and the substrate is a solar battery sheet before TCO film preparation. When the TCO film is prepared with a lower first power, the energy of the sputtered particles is lower, and the damage to the substrate is less, and in this process, the deposition rate of the TCO film is low, about 0.2nm / s~2nm / s, including the endpoint value, therefore, the prepared TCO film has uniform deposition, dense arrangement and smooth surface, and at the same time, a good interface is formed between the TCO film and the substrate, which reduces the defect density o...

Embodiment 2

[0043] The flow chart of the preparation method of the transparent conductive oxide thin film disclosed in this embodiment is as follows figure 2 As shown, it is applied to magnetron sputtering equipment, and the specific steps are as follows:

[0044] Step 201: Using the first power, prepare a first film on the substrate.

[0045] Wherein, the first power is 1W-500W, inclusive, the thickness of the first thin film is 3nm-20nm, inclusive, and the substrate is a solar battery sheet before TCO film preparation. When the TCO film is prepared with a lower first power, the energy of the sputtered particles is lower, and the damage to the substrate is less, and in this process, the deposition rate of the TCO film is low, about 0.2nm / s~2nm / s, including the endpoint value, therefore, the prepared TCO film has uniform deposition, dense arrangement and smooth surface, and at the same time, a good interface is formed between the TCO film and the substrate, which reduces the defect den...

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Abstract

The invention provides a making method of a transparent conductive oxide film. The method comprises the following steps: adopting a first power to make a first layer film on a substrate; and adopting a second power to make a second layer film on the first layer film, wherein the second power is greater than the first power. The making method of the transparent conductive oxide film adopts the lower power to make a flat, compact and uniform TCO film which has a very good protection effect on the substrate film, so a problem of the bombardment damages of sputtering particles to the substrate film during the making of the TCO film through adopting a higher power is avoided, thereby the high-quality TCO film is made, and the conversion efficiency of a solar battery is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a transparent conductive oxide film. Background technique [0002] In the development of solar cells, transparent conductive oxide (TCO) thin films play a vital role. Due to their photoelectric properties such as band gap, high light transmittance in the visible spectrum region and low resistivity, It can be used as front electrode, back reflection electrode, middle layer of top cell and bottom cell in laminated cell, cover glass film for encapsulation, etc. It is widely used in monocrystalline silicon solar cell, polycrystalline silicon solar cell, thin film solar cell and quantum point solar cells etc. [0003] Since TCO thin films are a very important part of solar cells, how to prepare high-quality TCO thin films with low-cost equipment will become a technical pursuit of the photovoltaic industry. The magnetron sputtering method is widely used in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35H01L31/18H01L31/0224
CPCY02P70/50
Inventor 陈剑辉李锋沈燕龙赵文超李高非胡志岩熊景峰宋登元
Owner YINGLI GRP
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