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Circuit arrangement

A circuit device and bridge circuit technology, applied in the field of circuit devices, can solve the problems of expensive, complex analysis circuits, large extra expenses, etc.

Active Publication Date: 2013-06-12
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, however, expensive dedicated MOSFETs and complex analysis circuits are required
Furthermore, both solutions involve substantial additional expenditure

Method used

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  • Circuit arrangement
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Embodiment Construction

[0014] The following detailed description refers to the accompanying drawings, showing by way of example specific details and embodiments for implementing the invention.

[0015] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment or design described herein as "example" is not necessarily to be construed as preferred or advantageous over other embodiments or designs.

[0016] The term "on" as used in reference to deposited material being formed on a side or surface may be used herein to mean that the deposited material may be formed directly on the implied side or surface, such as in direct contact with the side or surface . The term "on" as used in relation to deposited material being formed on a side or surface may be used herein to mean that the deposited material may be indirectly formed on the implied side or surface, wherein on the implied side or One or more additional layers are disposed between the surface a...

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Abstract

According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.

Description

Background technique [0001] In driver ICs (Integrated Circuits) for driving transistors externally, the detection of a short circuit is mainly achieved by monitoring the voltage of the corresponding transistor (for example, the voltage between the drain and the source of a field effect transistor). However, the widespread use of MOSFETs (Metal Oxide Field Effect Transistors) with even lower on-resistance introduces problems for protection schemes based on source-drain voltage measurements. [0002] figure 1 The shown graph 100 illustrates the substrate temperature T represented by the x-axis 102 of the graph 100 j and the on-resistance R of a typical MOSFET represented by the y-axis 104 of the graph 100 DS(on) The relationship between MOSFETs can be placed on the substrate or embedded in the substrate. A first curve 106 shows the relationship between substrate temperature and on-resistance for a typical MOSFET, and a second curve 108 shows the same relationship for about 98...

Claims

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Application Information

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IPC IPC(8): G01R19/00G01R31/02
CPCG01K7/01G01K2217/00G01R31/42G01R31/52H02M7/5387H02M1/32G01R21/02G01R31/2628
Inventor F·奥尔B·克普尔A·基普
Owner INFINEON TECH AG