Organic EL device

An organic and relative configuration technology, applied in identification devices, lighting devices, organic semiconductor devices, etc., can solve the problems of long manufacturing time and complexity, and achieve the effect of difficult gas barrier properties and high gas barrier properties.

Inactive Publication Date: 2013-06-12
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film production process described in Patent Document 2 has the problem of being complicated and requiring a long production time because the inorganic barrier film and the polymer film are alternately laminated.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

reference example A1

[0217] Use the aforementioned Figure 4 The manufacturing device shown was used to manufacture the second film. That is, a biaxially stretched polyethylene naphthalate film (PEN film, thickness: 100 μm, width: 350 mm, manufactured by Teijin Du Pont film Co., Ltd., trade name "TEONEX Q65FA") was used as the substrate (base Material 6), install it on the delivery roller 701. Then, while a magnetic field is applied between the film forming roller 31 and the film forming roller 32, electric power is supplied to the film forming roller 31 and the film forming roller 32, respectively, to discharge between the film forming roller 31 and the film forming roller 32 to generate plasma. Supply the film-forming gas (mixed gas of hexamethyldisiloxane (HMDSO) as a raw material gas and oxygen (also functioning as a discharge gas) as a reaction gas) to the formed discharge area, and proceed under the following conditions The thin film is formed by the plasma CVD method to obtain a second film...

reference example A2

[0236] The second film having a gas barrier layer with a thickness of 0.3 μm obtained in Reference Example A1 was mounted as the base material 6 on the delivery roller 701, and the gas barrier layer was newly formed on the surface of the gas barrier layer. Except for this, it carried out similarly to the reference example A1, and obtained the 2nd film (A). The thickness of the gas barrier layer on the substrate (PEN film) in the obtained second film (A) was 0.6 μm.

[0237] The obtained second film (A) is mounted on the delivery roller 701 as the base material 6, and the gas barrier layer is newly formed on the surface of the gas barrier layer. Except for this, it carried out similarly to Reference Example A1, and obtained the 2nd film (B).

[0238] The thickness of the gas barrier layer in the obtained second film (B) was 0.9 μm. The water vapor transmittance of the obtained second film (B) was 6.9×10 under the conditions of a temperature of 40°C, a humidity of 0% RH on the low ...

reference example A3

[0242] A second film was obtained in the same manner as in Reference Example A1 except that the supply amount of the source gas was 100 sccm.

[0243] The thickness of the gas barrier layer in the obtained second film was 0.6 μm. The water vapor transmittance of the obtained second film was 3.2×10 under the conditions of a temperature of 40°C, a humidity of 0%RH on the low humidity side, and a humidity of 90%RH on the high humidity side. -4 g / (m 2 ·Day), a value below the detection limit under the conditions of a temperature of 40°C, a humidity of 10% RH on the low humidity side, and a humidity of 100% RH on the high humidity side. Furthermore, the water vapor transmittance of the second film under the conditions of a temperature of 40°C, a humidity of 10% RH on the low humidity side, and a humidity of 100% RH on the high humidity side after bending the second film under the condition of a radius of curvature of 8 mm At a value below the detection limit, it was confirmed that the...

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Abstract

An organic EL device provided with a first film, a second film disposed facing the first film, and an organic EL element interposed between the first film and the second film. The second film is provided with a gas barrier layer containing a silicon atom, an oxygen atom, and a carbon atom. The silicon distribution curve, the oxygen distribution curve and the carbon distribution curve of the gas barrier layer satisfy the following conditions: (i) the ratio of the number of silicon atoms is the second largest in a region accounting for 90 % or more in the thickness direction of the gas barrier layer; (ii) the carbon distribution curve has at least one extreme value; and (iii) the difference between the maximum value and the minimum value of the ratio of the number of carbon atoms is 5 atom % or more in the carbon distribution curve.

Description

Technical field [0001] The present invention relates to an organic EL device, a lighting device, a surface light source, and a display device. Background technique [0002] Organic EL (Electro Luminescence) devices have a structure in which multiple thin films are laminated. By appropriately setting the thickness, material, etc. of each film, flexibility can be imparted to the element itself. When such an organic EL element is provided on the flexible film, the entire device on which the organic EL element is mounted can be a flexible device. [0003] The organic EL element deteriorates due to exposure to outdoor air, and is generally placed on a film with high gas barrier properties that is difficult to permeate oxygen and moisture. As such a film with high gas barrier properties, the following film has been proposed: a thin film made of inorganic oxide such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide is formed on a plastic substrate. . [0004] As ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/04G09F9/30H01L27/32H01L51/50H05B33/02F21Y105/00
CPCF21Y2105/00F21Y2115/15H10K50/844H10K2102/00H10K59/873
Inventor 小野善伸
Owner SUMITOMO CHEM CO LTD
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