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Growth method for defect-free selective epitaxy

A technology of epitaxial growth and growth method, which is applied in the field of epitaxial growth, can solve the problems of high technical threshold, many process steps, and high process complexity, and achieve the effects of wide application, smooth surface, and optimized deposition temperature

Active Publication Date: 2013-06-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Disadvantages of PLC: 1. The technical threshold is relatively high. At present, optical splitter chips are imported, and only a few universities in China have the laboratory level; 2. There are only packaging manufacturers in domestic industrial production
The function of the structure is obviously affected by the depth, and the required structure cannot be obtained by simply using the etching process. The combination of traditional epitaxy and etching has the disadvantages of many process steps and high process complexity.

Method used

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  • Growth method for defect-free selective epitaxy
  • Growth method for defect-free selective epitaxy
  • Growth method for defect-free selective epitaxy

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Embodiment Construction

[0020] The present invention is used for the growth method of defect-free selective epitaxy of planar optical waveguide power splitter, comprising:

[0021] (1) Before epitaxial growth, the silicon wafer is pretreated to form an anaerobic surface and inhibit natural oxidation. The specific steps are:

[0022] Using the RCA standard cleaning method, by adding HF-Last cleaning steps, the dangling bonds on the silicon surface are replaced with unstable H-Si bonds to prevent surface silicon oxidation;

[0023] (2) Use a dielectric layer deposition process, such as furnace tube, LPCVD or PECVD, to form SiO with a thickness of 0.1-4 μm 2 After the dielectric layer, use the photolithography process to coat and expose the surface of the silicon wafer to form the epitaxial growth window required for the device. Use the dry etching process to etch the surface of the dielectric layer and stop on the silicon surface to form a crystal direction parallel Or vertical channel sidewall and ep...

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Abstract

The invention discloses a growth method for a defect-free selective epitaxy. The method includes: (1), before the epitaxy is grown, a silicon slice is pretreated and an anaerobic surface is formed; (2), after a dielectric layer is deposited on the anaerobic surface, a crystal orientation channel side wall and an epitaxial growth window are formed after photoetching and drying etching, by utilization of the furnace tube thermal oxidation technology, a silicon affected layer of the surface is consumed, and by wet etching, a dielectric layer, growing on the surface of the epitaxial growth window, of a furnace tube is eliminated; (3), the silicon slice enters a cavity of the epitaxy to be baked; and (4), by means of a reaction system containing silicon (Si) deposition sources and halogen element etching sources, selective epitaxial deposition is carried out so as to enable the epitaxy to grow. By crystal orientation adjustment of the epitaxy deposition, the temperature of the epitaxy deposition and other growth conditions are optimized, the selective epitaxy which is defect-free and smooth on the surface is grown, solid foundations are provided for achieving of a planar optical waveguide power branching unit technology, and the selective epitaxy technology can also be used for other products.

Description

technical field [0001] The invention relates to an epitaxial growth method in the semiconductor field, in particular to a defect-free selective epitaxial growth method. Background technique [0002] The planar optical waveguide power splitter (PLC Optical Power Splitter) is an optical splitter device made by semiconductor technology. The function of optical splitter is realized in the chip, and the two ends of the chip are connected to the optical fiber through the optical fiber array that is coupled to the input and output. The PLC process has: 1. It is not sensitive to wavelength; 2. It has better uniformity of light splitting; 3. It can pull more than 1×32 optical splitting devices, and the more the number of splitting paths, the cheaper the unit cost; 4. The device is smaller in size, etc. Advantages, broad market prospects. Disadvantages of PLC: 1. The technical threshold is relatively high. At present, optical splitter chips are imported, and only a few universities i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
Inventor 高杏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP