Growth method for defect-free selective epitaxy
A technology of epitaxial growth and growth method, which is applied in the field of epitaxial growth, can solve the problems of high technical threshold, many process steps, and high process complexity, and achieve the effects of wide application, smooth surface, and optimized deposition temperature
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[0020] The present invention is used for the growth method of defect-free selective epitaxy of planar optical waveguide power splitter, comprising:
[0021] (1) Before epitaxial growth, the silicon wafer is pretreated to form an anaerobic surface and inhibit natural oxidation. The specific steps are:
[0022] Using the RCA standard cleaning method, by adding HF-Last cleaning steps, the dangling bonds on the silicon surface are replaced with unstable H-Si bonds to prevent surface silicon oxidation;
[0023] (2) Use a dielectric layer deposition process, such as furnace tube, LPCVD or PECVD, to form SiO with a thickness of 0.1-4 μm 2 After the dielectric layer, use the photolithography process to coat and expose the surface of the silicon wafer to form the epitaxial growth window required for the device. Use the dry etching process to etch the surface of the dielectric layer and stop on the silicon surface to form a crystal direction parallel Or vertical channel sidewall and ep...
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