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Photodetection element, and method of producing photodetection element

A manufacturing method and light detection technology, applied to electrical components, semiconductor devices, circuits, etc., can solve problems such as lack of drop characteristics, poor sensor performance, and large transition characteristics, and achieve the goal of improving transition characteristics, improving drop characteristics, and improving sensitivity Effect

Active Publication Date: 2013-06-26
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, the conventional ultraviolet sensor shown in Patent Document 1 has the following problems: since the sensitive layer 103 is exposed on the surface, the dark current is large, the transition characteristic (transition characteristic) is large, and the drop characteristic (立ち下がり characteristic) is also lacking in sensitivity. , poor sensor performance

Method used

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  • Photodetection element, and method of producing photodetection element
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  • Photodetection element, and method of producing photodetection element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] (production of samples)

[0115] As a substrate, prepare LiTaO with a thickness of about 350 μm 3 The substrate (hereinafter, referred to as "LT substrate") was formed with a high-frequency magnetron sputtering method on the LT substrate as follows to form a 500-nm-thick induction layer.

[0116] That is, as a target, a non-doped ZnO sintered body was cut into a thickness of 5 mm and a diameter of 100 mm, and a target was prepared that was attached to a copper backing plate.

[0117] Then, the LT substrate and the target are arranged to face each other, and a back pressure of about 10 is formed in the sputtering apparatus. -5 After a vacuum state of about Pa, argon (flow rate: 5.57×10 -2 Pa·m 3 / s) (33sccm) and oxygen (flow rate: 4.90×10 -3 Pa·m 3 / s) (2.9sccm) was introduced into the above-mentioned sputtering device, and the substrate holder was rotated for 15 minutes under the conditions of pressure: 0.35-0.7Pa, high-frequency output: 300W, and substrate tempera...

Embodiment 2

[0155] Except having set the film thickness of the non-sensitive layer to 2.8 nm and 140 nm, the samples of sample numbers 7 and 8 were produced in the same method and procedure as sample number 1, respectively.

[0156] Next, for sample numbers 1 (film thickness of the non-sensitive layer: 28 nm), 7, and 8, each sample was irradiated with ultraviolet light in a wavelength range of 280 to 430 nm from an ultraviolet light source equipped with a spectroscope, and the spectral characteristics were observed.

[0157] Figure 7 for its measurement results. The horizontal axis represents wavelength (nm), and the vertical axis represents spectral sensitivity (a.u.).

[0158] by the Figure 7 It can be seen that the spectral sensitivity improves as the film thickness of the non-sensitive layer becomes thinner.

[0159] That is, since the non-sensitive layer of sample number 8 has a thick film thickness of 140 nm, the light absorption in the non-sensitive layer is large and the resp...

Embodiment 3

[0164] Sample numbers 11 and 12 were produced in the same method and procedure as sample number 1, except that the distance between electrodes (predetermined interval) of the exposed part was set at 5 μm.

[0165] In addition, in the same method and procedure as sample numbers 11 and 12, sample number 13, which is composed of a substrate / (electrode+sensing layer) with a sensing layer formed on the bare part without forming a non-sensing layer and an insulating protective film, was produced. , 14.

[0166] And, about each sample of sample numbers 11-14, the spectral characteristic was measured by the same method and procedure as Example 2.

[0167] Figure 8 for its measurement results. The horizontal axis represents wavelength (nm), and the vertical axis represents spectral sensitivity (a.u.).

[0168] Sample numbers 13 and 14 do not have a non-inductive layer, and therefore do not have a ZnO-ZnO homogeneous junction surface. Therefore, it can be seen that the spectral char...

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Abstract

A sensitive layer (1) comprising a main component of ZnO is formed on the surface of a substrate (3), and a pair of electrodes (2a,2b) are arranged on the surface of the sensitive layer (1) in an opposing formation across a predetermined interval (t) (e.g. 5 to 10[mu]m) so that a so-called planar structure is formed. An insensitive layer (4) comprising a main component of ZnO is formed on a predetermined interval portion (5) where the surface of the sensitive layer (1) is exposed and end portions of the electrodes (2a,2b), and an insulating protective film (6) comprising substances such as SiO2 is formed on the surface of the insensitive layer (4). Accordingly, a photodetection element such as a high-performance UV light sensor is achieved that is capable of suppressing dark current, has good transient and falling properties, and also has excellent spectral properties. A similar effect can be obtained even when the electrodes and the sensitive layer are formed on the surface of the substrate, and the insensitive layer and the insulating protective film are sequentially formed on the surface of the sensitive layer.

Description

technical field [0001] The present invention relates to a photodetection element and a method for manufacturing the photodetection element. More specifically, it relates to a photoconductive photodetection element whose resistance value is changed by irradiation with ultraviolet light and a method for manufacturing the same. Background technique [0002] Photodetection elements represented by ultraviolet sensors are widely used as flame sensors such as fire alarms and combustion monitoring devices for burners, or as ultraviolet detection devices such as ultraviolet irradiation devices for detecting the amount of ultraviolet radiation outdoors. Application to optical communication devices is expected. [0003] Conventionally, as such a photodetection element, a photoconductive type in which the resistance value is changed by irradiation with ultraviolet rays and a photoelectromotive type in which photoelectromotive force is generated by irradiation with ultraviolet rays are k...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0248
CPCH01L31/0224H01L31/09
Inventor 濑户弘之中川原修下藤奏子
Owner MURATA MFG CO LTD
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