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Semiconductor device

一种半导体、氧化物半导体的技术，应用在半导体器件、半导体/固态器件制造、晶体管等方向，能够解决电特性劣化、泄漏电流增大、晶体管常导通化等问题，达到电特性良好、可靠性高的效果

Inactive Publication Date: 2014-05-07
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, even when there are few oxygen vacancies in the initial oxide semiconductor layer, oxygen vacancies may increase due to various factors.
If oxygen vacancies in the oxide semiconductor layer increase, it leads to deterioration of electrical characteristics, such as normal conduction of transistors, increase of leakage current, shift of threshold voltage due to pressure application, etc.

Method used

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  • Semiconductor device
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Embodiment approach 1

[0044] In this embodiment mode, a semiconductor device according to one embodiment of the present invention will be described using drawings.

[0045] Figure 1A , Figure 1B , Figure 1C , Figure 1D and Figure 1E It is a plan view and a cross-sectional view of a transistor according to one embodiment of the present invention. Figure 1A shows the top view of the transistor, Figure 1B equivalent to along Figure 1A The cross-section of the dotted line X1-Y1 shown. also, Figure 1C equivalent to along Figure 1A Shown is the cross-section of the dotted line V1-W1. also, Figure 1D is showing Figure 1B A diagram showing the width of each structure of the transistor. also, Figure 1E yes Figure 1B An enlarged view of region 105 is shown. In addition, in Figure 1A In the top view of , some elements are shown through or omitted for clarity.

[0046] Figure 1A , Figure 1B , Figure 1C , Figure 1D and Figure 1E The illustrated transistor 150 includes: an...

Embodiment approach 2

[0083] In this embodiment, use Figure 2A to Figure 4B Description explained in Embodiment Mode 1 Figure 1A to Figure 1E The fabrication method of transistor 150 is shown.

[0084] As the substrate 102, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like can be used. In addition, single crystal semiconductor substrates or polycrystalline semiconductor substrates composed of silicon or silicon carbide, compound semiconductor substrates composed of silicon germanium, etc., SOI (Silicon On Insulator: silicon on insulator) substrates, etc. can also be applied. A substrate in which a semiconductor element is provided on the above substrate can also be used.

[0085] Aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, gallium oxide, germanium oxide, yttrium oxide, zirconia, The oxide insulating film 104 is formed of an oxide insulating film such as lanthanum oxide, neodymium oxide, hafnium oxide, and ta...

Embodiment approach 3

[0145] In this embodiment, use Figure 5A to Figure 5C as well as Figure 6A to Figure 6D A transistor having a different structure from the transistor described in Embodiment Mode 1 will be described.

[0146] Figure 5A , Figure 5B and Figure 5C It is a plan view and a cross-sectional view of a transistor according to one embodiment of the present invention. Figure 5A is the top view of the transistor, Figure 5B equivalent to along Figure 5A The section shown by the dotted line X2-Y2. also, Figure 5C equivalent to along Figure 5A The cross-section of the dotted line V2-W2 shown. Note that in Figure 5A In the top view of , some elements are shown through or omitted for clarity. In addition, the same reference numerals are used to denote the same parts as the transistors shown in Embodiment 1 or parts having the same functions as the transistors shown in Embodiment 1, and repeated description thereof will be omitted.

[0147] Figure 5A , Figure 5B and ...

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Abstract

A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed.

Description

technical field [0001] The present invention relates to a semiconductor device including an oxide semiconductor and a method of manufacturing the semiconductor device. [0002] In this specification, a semiconductor device refers to all devices that can operate by utilizing semiconductor characteristics, and therefore electro-optical devices, semiconductor circuits, and electronic equipment are all semiconductor devices. Background technique [0003] A technique of constituting a transistor (also called a thin film transistor (TFT)) by using a semiconductor thin film formed on a substrate having an insulating surface is attracting attention. The transistor is widely used in electronic devices such as integrated circuits (ICs) and image display devices (display devices). Silicon-based semiconductor materials are widely known as semiconductor thin films that can be applied to transistors, and oxide semiconductor films are attracting attention as other materials. [0004] For...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/49
CPCH01L29/7869H01L21/02554H01L21/02581H01L21/02631H01L21/32139H01L27/1225H01L21/02565H01L21/02617H01L29/04H01L29/26H01L29/41733H01L29/42384H01L29/45H01L29/78H01L29/4908H01L29/78606H01L29/78693
Inventor 山崎舜平须泽英臣笹川慎也田中哲弘
Owner SEMICON ENERGY LAB CO LTD
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