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Method for low-temperature and efficient preparation of large-size graphene

A graphene, large-size technology, applied in the field of graphene preparation, can solve the problems of high cost, long preparation time, high preparation temperature, etc., and achieve the effect of simple method, large size, low-temperature and high-efficiency preparation

Active Publication Date: 2013-07-03
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of high preparation temperature, long preparation time and high cost in the preparation of graphene by traditional CVD method, and provide a method for preparing large-size graphene at low temperature and high efficiency

Method used

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  • Method for low-temperature and efficient preparation of large-size graphene
  • Method for low-temperature and efficient preparation of large-size graphene
  • Method for low-temperature and efficient preparation of large-size graphene

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specific Embodiment approach 1

[0021] Specific embodiment one: the method for preparing large-scale graphene at low temperature and high efficiency in this embodiment is carried out according to the following steps:

[0022] 1. Put the metal substrate into the plasma-enhanced chemical vapor deposition equipment, evacuate to 5Pa, and inject H 2 , H 2 The flow rate is 20sccm, the working pressure is 200Pa, then the temperature is raised, and the working temperature is 500-700°C within 40 minutes, and the heat preservation and annealing treatment is 30 minutes;

[0023] 2. After the annealing treatment, continue to feed Ar and CH 4 gas, adjust H 2 , Ar and CH 4 The flow rates are 40sccm, 80sccm and 1-8sccm respectively, the working pressure is 1000Pa, the RF power frequency of the deposition system is 13.56MHz, the RF power is 200W, and the deposition time is 10-300 seconds;

[0024] 3. After the deposition is over, turn off the RF power supply and heating power supply, and stop feeding CH 4 gas, with Ar ...

specific Embodiment approach 2

[0026] Embodiment 2: This embodiment differs from Embodiment 1 in that the metal substrate used in step 1 needs to be ultrasonically cleaned in acetone, absolute ethanol and deionized water for 10-20 minutes before use. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0027] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the working temperature in Step 1 is 510-690°C. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention discloses a method for low-temperature and efficient preparation of large-size graphene, and relates to a method for preparing graphene, in order to solve the problems of conventional chemical vapor deposition (VDC) graphene preparation method which is high in preparation temperature, low in preparation duration and comparatively high in cost. The method comprises the following steps of: I, placing a metal substrate in plasmid enhanced chemical vapor deposition equipment, vacuumizing and filling H2, increasing temperature, preserving heat and implementing an annealing treatment; II, further filling Ar and CH4 gases, and depositing; and III, after depositing, turning off a radio frequency power supply and a heating power supply, stopping filling the CH4 gas, taking Ar and H2 as protective gases, and rapidly cooling to room temperature at 10 DEG C / s until graphene uniformly grows from the surface of the metal substrate, to finish. The method disclosed by the invention can finish growth of the graphene within a quite short duration, and can realize low-temperature and efficient preparation of the graphene material; and the method is simple, efficient, low in cost and convenient for industrial production, and the prepared graphene is large in size, high in quality and uniform in surface.

Description

technical field [0001] The present invention relates to a method for preparing graphene. Background technique [0002] Graphene is a new type of carbon material with a single-layer two-dimensional honeycomb lattice structure closely packed with carbon atoms. The basic unit of three-dimensional graphite). Graphene's unique two-dimensional nanocrystal structure makes it have the advantages of high electron transfer rate, excellent electrical conductivity, high thermal conductivity, excellent mechanical properties, and good chemical stability and light transmission. It is expected to be used in nanoelectronic devices, transparent Conductive films, composite materials, catalytic materials, field emission materials, solar cell electrodes, photoelectric converters and other fields have been widely used. For this, graphene won the 2010 Nobel Prize in Physics just 6 years after its discovery in 2004. [0003] At present, there are many methods for preparing graphene, such as mech...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 亓钧雷张丽霞曹健梁松冯吉才
Owner HARBIN INST OF TECH
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