The invention discloses a method for low-temperature and efficient preparation of large-size graphene, and relates to a method for preparing graphene, in order to solve the problems of conventional chemical vapor deposition (VDC) graphene preparation method which is high in preparation temperature, low in preparation duration and comparatively high in cost. The method comprises the following steps of: I, placing a metal substrate in plasmid enhanced chemical vapor deposition equipment, vacuumizing and filling H2, increasing temperature, preserving heat and implementing an annealing treatment; II, further filling Ar and CH4 gases, and depositing; and III, after depositing, turning off a radio frequency power supply and a heating power supply, stopping filling the CH4 gas, taking Ar and H2 as protective gases, and rapidly cooling to room temperature at 10 DEG C/s until graphene uniformly grows from the surface of the metal substrate, to finish. The method disclosed by the invention can finish growth of the graphene within a quite short duration, and can realize low-temperature and efficient preparation of the graphene material; and the method is simple, efficient, low in cost and convenient for industrial production, and the prepared graphene is large in size, high in quality and uniform in surface.