Semiconductor failure analysis structure and formation method, method of detecting failure time

Abstract

The invention provides a semiconductor failure analysis structure, a forming method of the semiconductor failure analysis structure and a failure time detection method thereof. The semiconductor failure analysis structure comprises a semiconductor substrate, a metal layer to be tested, a first metal layer, a second metal layer, a first conductive plug, a plurality of first resistance metal layers, a plurality of second resistance metal layers, a plurality of second conductive plugs and a plurality of third conductive metal layers. The semiconductor substrate is provided with an area to be tested, a first serial area and a second serial area. The metal layer to be tested, the first metal layer and the second metal layer are placed on the semiconductor substrate. The first conductive plug placed in an interlayer dielectric layer enables the first metal layer, the second metal layer and the metal layer to be tested to be connected in series. The plurality of first resistance metal layers are arranged in the first serial area. The plurality of second resistance metal layers are arranged in the second serial area. The plurality of second conductive plugs are placed in the interlayer dielectric layer of the first serial area. The plurality of third conductive metal layers are arranged in the interlayer dielectric layer of the second serial area. The first conductive plug, the second conductive plugs and the third conductive plugs enable the metal layer to be tested, the first metal layer, the second metal layer, the plurality of first resistance metal layers and the plurality of second resistance metal layers to be sequentially connected in series.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor failure detection structure and a forming method, and a method for detecting failure time. Background technique [0002] The development requirements of high complexity and high integration of large-scale integrated circuits make semiconductor devices must have higher reliability. However, currently there are many reasons affecting the reliability of semiconductor devices, among which electro-migration (Electro-Migration; EM for short) phenomenon is one of the reasons leading to failure of semiconductor devices. Specifically, electromigration can lead to an open circuit or a short circuit inside a semiconductor device, increasing the leakage of the device and causing it to fail. The cause of electromigration is the movement of metal atoms. When the current density in the metal interconnection line is high, the electrons move from the cathode to the anode a...

AI Technical Summary

Problems solved by technology

[0007] As the development direction of semiconductor technology is integration and miniaturization, it can be proved by experiments that the miniaturization of semiconductor devices can improve its life and speed. The value is also getting smaller and smaller, resulting in a smaller and smaller voltage between the test pads of the existing electromigration test structure, so when using the existing electromigration test structure for failure detection, the test equipment will be difficult to identify due to its too small resistance , it is difficult to detect accurate electromigration

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