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Lateral double-diffusion metal oxide semiconductor field effect transistor

An oxide semiconductor and field effect transistor technology, applied in the field of LDMOS, to achieve the effect of optimizing electric field distribution, avoiding collision ionization, and improving breakdown voltage

Active Publication Date: 2013-07-03
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it does not solve the problems in LDMOS shown in Figure 1

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  • Lateral double-diffusion metal oxide semiconductor field effect transistor
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  • Lateral double-diffusion metal oxide semiconductor field effect transistor

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Embodiment Construction

[0026] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection. It is easy to understand that, according to the technical solution of the present invention, those skilled in the art may propose other alternative implementation manners without changing the essence and spirit of the present invention. Therefore, the following specific embodiments and drawings are only exemplary descriptions of the technical solution of the present invention, and should not be regarded as the entirety of the present invention or as a limitation or restriction on the technical solution of the present invention.

[0027] In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and shape features such as roundness due to etching are not illustrated in the ...

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Abstract

The invention provides a lateral double-diffusion metal oxide semiconductor field effect transistor (LDMOS), the LDMOS comprises a source region, a grid dielectric layer, a drain region, a drift region which is arranged between the drain region and the grid dielectric layer, a field oxide layer which is arranged above the drift region and a grid electrode which is arranged above the grid dielectric layer, wherein a field auxiliary electrode is arranged on a portion of the field oxide layer, the portion of the field oxide layer is relatively close to the drain region, the field auxiliary electrode is polarized with a voltage, and the voltage direction of the field auxiliary electrode is the same as the voltage direction which is polarized by the drain region in on-state. The LDMOS has the advantages of being high in breakdown voltage in on-state and high in working voltage.

Description

technical field [0001] The invention belongs to the technical field of lateral double diffused metal oxide semiconductor field effect transistor (Lateral Double Diffused MOSFET, LDMOS), in particular to the LDMOS in which a field auxiliary electrode is arranged on a field oxide layer to increase its breakdown voltage in an on state. Background technique [0002] As a power switching device, LDMOS has the advantages of relatively high operating voltage, simple process, and easy process compatibility with low-voltage CMOS circuits. -state)". With the wide application of LDMOS in power integrated circuits (Power Integrated Circuit, PIC), the device performance requirements of LDMOS are getting higher and higher, and one of the important requirements is to increase the breakdown voltage of LDMOS in the on state. [0003] Figure 1 shows a schematic diagram of a basic cross-sectional structure of a conventional LDMOS. As shown in FIG. 1, on the P-type substrate 100 of the LD...

Claims

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Application Information

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IPC IPC(8): H01L29/78
CPCH01L29/402H01L29/1045H01L29/41758H01L29/41775H01L29/42368H01L29/7835
Inventor 韩广涛颜剑
Owner CSMC TECH FAB2 CO LTD