Thin film transistor

Abstract

The invention discloses a thin film transistor which comprises a substrate, a gate arranged on the substrate, a gate insulation layer covering the gate and an active layer covering the gate insulation layer, wherein the active layer comprises a trench layer, a source and a drain; the source and the drain are respectively arranged on two opposite sides of the trench layer and are electrically connected with a corresponding source electrode and a corresponding drain electrode; a first etching barrier layer and a second etching barrier layer are sequentially arranged on the surface of the trench layer; a groove for exposing the first etching barrier layer is formed in the middle of the second etching barrier layer and divides the second etching barrier layer into a first region and a second region; the source electrode extends from the surface of the source to cover the first region; and the drain electrode extends from the surface of the drain to cover the second region. By the structure, the influence caused by metal atom dispersion or electron migration of the source electrode or the drain electrode on the conductive performance of the trench layer can be effectively prevented; and the reliability is improved.

Description

technical field [0001] The invention relates to a thin film transistor. Background technique [0002] With the advancement of process technology, thin film transistors have been widely used in displays to meet the requirements of thinning and miniaturization of displays. Thin film transistors generally include components such as gate, drain, source, and channel layer, which change the conductivity of the channel layer by controlling the voltage of the gate, so that the source and drain are turned on or off. state. [0003] Generally, thin film transistors often use copper or aluminum as the material for making the source electrode or the drain electrode. However, materials such as copper or aluminum are prone to diffusion or electron migration during use. When metal atoms such as copper or aluminum diffuse into the channel layer, it will affect the performance of the thin film transistor, and even cause a short circuit of the thin film transistor in severe cases. Therefo...

AI Technical Summary

Problems solved by technology

However, materials such as copper or aluminum are prone to diffusion or electron migration during use

When metal atoms such as copper or aluminum diffuse into the channel layer, it will affect the performance of the thin film transistor, and even cause a short circuit of the thin film transistor

Therefore, the above-mentioned thin film transistors have poor reliability

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