The invention discloses a method for manufacturing a self-alignment
metal interconnection wire, comprising the following steps of: providing a
semiconductor substrate with more than one grid
electrode structure, wherein the grid
electrode structure comprises a grid
electrode layer, a grid conducting layer and a first
hard mask layer which are successively positioned on the
semiconductor substrate; forming a first
photoresist layer of which the surface is higher the grid electrode structure;
etching the first
photoresist layer with plasmas, and exposing the first
mask layer and partial grid conducting layer;
etching the exposed grid conducting layer to cause sinks generating on the grid conducting layer; removing the first
photoresist layer; forming side walls, for filling the sinks, on two sides of the grid electrode structure; forming inter-layer
dielectric layers on the
semiconductor substrate and the grid electrode structure;
etching the inter-layer
dielectric layers to the semiconductor substrate and forming a
contact hole on a set position; and filling a
metal layer into the
contact hole to form the
metal interconnection wire. With the method, the thickness of an
insulation layer between the grid conducting layer and the metal
interconnection wire is increased, and the phenomenon of breakdown between the grid conducting layer and the metal interconnection wire can be avoided.