A molecular beam epitaxy growth method for low-density inas quantum dots

Abstract

The invention discloses a growth method of a low-density InAs (Indium Arsenide) quantum dot. The growth method comprises the following steps of: 1: inserting an InAs sacrificial layer quanta point before an InAs active layer quanta point is grown; 2: completely desorbing the InAs sacrificial layer quanta point by annealing in situ at high temperature; and 3: fine adjusting the critical growth parameter of the InAs sacrificial layer quanta point converted from two dimensions to three dimensions, and growing the InAs active layer quanta point. According to the invention, the critical growth parameter, which is acquired in situ, of the InAs sacrificial layer quanta point converted from two dimensions to three dimensions effectively reduces the influence brought by the random error of a system, so that higher low-density repetitiveness of the InAs sacrificial layer quanta point near the critical growth parameter is achieved, and the growth success ratio of the low-density InAs sacrificial layer quanta point is effectively enhanced; the display density of an atomic force micrograph is 108 / cm<2>, and the sharp peak of a microcell photoinduced spectrum further indicates that the density of the quanta point is very low; and the low-density quanta point grown through the method is suitable for preparing a single-photon source device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a molecular beam epitaxy (MBE) method for growing low-density InAs quantum dots on a GaAs substrate. Background technique [0002] The use of InAs single quantum dots to achieve single photon and entangled photon emission, solid-state quantum computing and quantum information processing, and extremely low threshold single quantum dot lasers are currently hot topics. It is an important technical approach to prepare high-quality single-photon sources by growing low-density InAs quantum dots. In the method of growing low-density self-organized InAs quantum dots by molecular beam epitaxy, the key to obtaining low-density quantum dots is to precisely control the critical transition parameters of the two-dimensional to three-dimensional structure of the quantum dots. For InAs / GaAs strained self-organized quantum dots, reflection high-energy electron diffractometer (RHE...

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Problems solved by technology

Therefore, for low-density InAs quantum dots grown using ex-situ calibrated critical parameters, the growth parameter errors caused by different batches of samples due to molybdenum, chamber atmosphere, growth rate test, etc. will lead to repeatable growth of low-density InAs quantum dots. Very low sex (below 50%)

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