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A low-cost method for preparing large-size single-crystal graphene

A single crystal graphene, large-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of single crystal substrate surface treatment process complex, expensive, difficult to reuse, etc., to achieve good Application prospects, simple method, and the effect of omitting the surface treatment process

Active Publication Date: 2016-04-27
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the technical problems of complex surface treatment process of single crystal substrate commonly used in the preparation of large-size single-crystal graphene materials by CVD method, difficulty in repeated utilization and high price, thereby providing a low-cost method for preparing large-size single-crystal graphene method

Method used

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  • A low-cost method for preparing large-size single-crystal graphene
  • A low-cost method for preparing large-size single-crystal graphene
  • A low-cost method for preparing large-size single-crystal graphene

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specific Embodiment approach 1

[0020] Specific embodiment one: a kind of low-cost preparation method of large-size single-crystal graphene of the present embodiment is to carry out according to the following steps:

[0021] 1. Using the electron beam evaporation method, using metal as the evaporation source, in a high vacuum environment, it is 1×10 -3 ~1×10 -4 Under Pa, a single crystal metal film is evaporated on a single crystal mica substrate; wherein, the evaporation rate is 0.02-0.20nm / s, the substrate temperature is 450-650°C, and the thickness of the evaporated single-crystal metal film is 500-1000nm;

[0022] 2. Put the single crystal metal thin film obtained in step 1 into the chemical vapor deposition equipment, evacuate to 3Pa, and inject H 2 , Ar, H 2 The flow rate is 50sccm, the Ar flow rate is 100sccm, and the working pressure is 1×10 5 Pa, then heat up to a heat treatment temperature of 850-1000°C, and a heat treatment time of 30-120min;

[0023] 3. After heat treatment, raise the tempera...

specific Embodiment approach 2

[0029] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the metal evaporation source in step 1 is copper, nickel or cobalt. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the evaporation rate in step 1 is 0.02 nm / s. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a method for low-cost preparation of large-size monocrystal graphene, relates to a preparation method of monocrystal graphene, and is used for solving the technical problems that in the chemical vapor deposition (CVD) method for preparing the large-size monocrystal graphene material, the common monocrystal substrate surface treatment process is complex, and the monocrystal substrate is difficult to reuse and high in cost. The method disclosed by the invention comprises the following steps of: I, evaporating a monocrystal metal thin film on a monocrystal mica substrate; II, placing the monocrystal metal thin film obtained from the step I into chemical vapor deposition equipment, vacuumizing and filling H2 and Ar, increasing temperature and implementing heat treatment; III, continuing to fill a CH4 gas, and depositing; and IV, closing a heating power supply, stopping filling the CH4 gas, rapidly cooling to room temperature by taking Ar and H2 as protective gases, and promoting uniform growth of high-quality monocrystal graphene on the surface of the monocrystal metal substrate. The monocrystal graphene prepared by the invention is large in size, high in quality and few in defect; and the method disclosed by the invention is applicable to monocrystal graphene material manufacturing field.

Description

technical field [0001] The present invention relates to a method for preparing single crystal graphene. Background technique [0002] Graphene is a two-dimensional honeycomb lattice structure formed by a single layer of carbon atoms tightly packed, and is the basic unit of other carbon nanomaterials. Due to the unique two-dimensional structural features and excellent crystallographic quality, the charge carriers in graphene exhibit photon-like behavior. In addition, graphene also has excellent mechanical, electrical, thermal, optical and other properties, and is expected to be widely used in nanoelectronic devices, transparent conductive films, composite materials, catalytic materials, field emission materials, solar cell electrodes, photoelectric converters, etc. . [0003] At present, there are many methods for preparing graphene, the most commonly used methods are mechanical exfoliation, chemical exfoliation, SiC epitaxial growth, chemical vapor deposition (CVD) and so ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/00C30B23/00
Inventor 亓钧雷张丽霞曹健梁松冯吉才
Owner HARBIN INST OF TECH
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