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High-transmittance packaged LED (light emitting diode)

A technology of light-emitting diodes and high transmittance, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of low mechanical strength, large difference in refractive index, low brightness, etc., and achieve the effect of good luminous efficiency

Inactive Publication Date: 2013-07-17
蔡凯雄 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The epoxy resin itself contains an aromatic benzene ring structure that can absorb ultraviolet rays. After a period of use, the epoxy resin will yellow due to the benzene ring absorbing ultraviolet (UV) or endothermic aging, resulting in the penetration of the light-transmitting layer 14. Rate decay, brightness reduction
The mechanical strength of silicone resin is lower than that of epoxy resin, and its adhesion to the wafer 12 is poor. Its refractive index is between 1.4 and 1.5, so the refractive index difference with the wafer 12 is large, so that the transmittance is relatively high. low and low brightness

Method used

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  • High-transmittance packaged LED (light emitting diode)
  • High-transmittance packaged LED (light emitting diode)
  • High-transmittance packaged LED (light emitting diode)

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0044] (a) 258g of vinyl chloride (purchased from Formosa Plastics) was added to 15000g of silane (Silane, purchased from Germany Waker, model 62M) and 3 / 1000 catalyst potassium hydroxide (KOH), stirred and mixed at a temperature of 120 for 30 15250g of vinyl silicon-based material (Vinylsilicone) can be obtained in 1 minute. Because during the reaction process, part of the materials involved in the reaction are consumed, so the weight will decrease.

[0045] (b) Add 15,000 g of vinyl silicon-based materials to 236 g of epoxy silane (purchased from Waker, Germany, model S510), and stir and mix at a temperature of 25° C. for 10 minutes to obtain 15,236 g of A glue. At this time, the vinyl bonded silicon-based material and the epoxy silane do not react with each other. The chemical formula of this epoxy silane is as follows:

[0046]

[0047](c) 15000g of hydrogen-bonded silicon-based material (Hydroxysilicone, purchased from Waker, Germany, model 62M) was added to 102g of ...

preparation example 2

[0050] (a) With the method described in (a) of , 15250 g of vinyl bonded silicon-based materials were obtained.

[0051] (b) Add 15,000 g of vinyl silicon-based materials to 220 g of epoxy silane (purchased from Waker, Germany, model S520), and stir and mix at a temperature of 25° C. for 10 minutes to obtain 15,236 g of A glue. At this time, the vinyl bonded silicon-based material and the epoxy silane do not react with each other. The chemical formula of this epoxy silane is as follows:

[0052]

[0053] (c) With the method described in (c) of , obtain the B glue of 15102g.

[0054] (d) Add 15220 g of glue A to 15102 g of glue B and stir and mix at a temperature of 25° C. for 10 minutes to make glue A and glue B polymerize and obtain 30322 g of a copolymer. The copolymer has 0.73% epoxysilane.

preparation example 3

[0056] (a) With the method described in (a) of , 15250 g of vinyl bonded silicon-based materials were obtained.

[0057] (b) Add 15,000 g of the vinyl bonded silicon-based material to 736 g of epoxy silane, stir and mix at a temperature of 25° C. for 10 minutes to obtain 15,736 g of A glue. At this time, the vinyl bonded silicon-based material and the epoxy silane do not react with each other. The chemical formula of this epoxy silane is as follows:

[0058]

[0059] (c) With the method described in (c) of , obtain the B glue of 15102g.

[0060] (d) Add 15736g of glue A to 15102g of glue B and stir and mix at a temperature of 25°C for 10 minutes to make glue A and glue B polymerize and obtain 30838g of copolymer. The copolymer has 2.38% epoxysilane.

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Abstract

The invention discloses a high-transmittance packaged LED which comprises a substrate, a light emitting element, a lead unit and a heat-resistant layer. The light emitting element is formed on the substrate; the lead unit is connected with the substrate and the light emitting element; and the heat-resistant layer is at least formed on the light emitting diode and comprises light-transmitting silicon resin and 0.1%-10% of epoxy silicane by weight. Therefore, the heat-resistant layer is good in adhesive effect, high in transmittance, yellowing-free and capable of prolonging the service life of the high-transmittance packaged LED.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a packaged light-emitting diode with high transmittance. Background technique [0002] Compared with traditional incandescent lights, light-emitting diodes (LEDs) have many advantages, such as power saving, small size, long service life, high efficiency, and low pollution, making light-emitting diodes the best solution to replace existing lighting equipment. [0003] Since the chip of the light-emitting diode itself does not have protection functions such as anti-oxidation and anti-moisture, the chip needs to be packaged before it can be used. The manufacturing process of packaging is to use several metal wires to connect several electrodes of the chip to a substrate respectively, so that the chip can use several solder joints on the substrate to form a circuit connection with the outside and then emit light. [0004] Such as figure 1 As shown, an existing packaged LED includes a subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/56C08L83/04
CPCH01L2224/48091H01L2224/73265
Inventor 蔡凯雄李建立
Owner 蔡凯雄
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