Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A plasma deposition and etching system

An etching system and plasma technology, used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as poor compatibility, increase the bias power supply control system, and meet the needs of etching functions , the effect of improving heating efficiency and heating stability

Active Publication Date: 2015-11-18
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] According to the content disclosed in the above patent, it can be seen that most of the existing devices only have the etching function or the growth function alone, and the compatibility between the two is poor. Therefore, in order to improve the use efficiency of the existing devices and reduce the cost of material structure preparation process, we need a large-area material preparation and processing device that integrates deposition and etching functions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A plasma deposition and etching system
  • A plasma deposition and etching system
  • A plasma deposition and etching system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 4

[0065] This embodiment provides a preparation process of a silicon surface nanocone structure. The equipment used is the plasma deposition and etching system mentioned in Embodiment 1. The difference is that the control methods of the system are different. The specific steps include: specific steps include:

[0066] (1) Take n-type silicon (100), and perform ultrasonic cleaning in acetone, ethanol and deionized water in sequence;

[0067] (2) After the silicon wafer is air-dried, put it into the reaction chamber for etching;

[0068] (3) Vacuum the cavity to close to 10 -2 Torr, then re-inflate to 20Torr, methane / hydrogen flow ratio is 0 / 100;

[0069] (4) Add filament current, adjust the filament voltage so that the temperature is about 2100°C, adjust the distance between the filament and the substrate so that the substrate temperature is about 800°C, turn on the power supply of the upper grid, and adjust the voltage so that the distance between the upper grid and the filame...

Embodiment 5

[0074] This embodiment provides a preparation process of a silicon surface nanocone structure. The equipment used is the plasma deposition and etching system mentioned in Embodiment 1. The difference is that the control methods of the system are different. The specific steps include:

[0075] (1) Take the newly prepared porous silicon and perform ultrasonic cleaning in acetone, ethanol and deionized water in sequence. In order to prevent the damage of the porous structure, the ultrasonic time of porous silicon is relatively short;

[0076] (2) After the silicon wafer is air-dried, put it into the reaction chamber for etching;

[0077] (3) Vacuum the cavity to close to 10 -2 Torr, then re-inflate to 20Torr, methane / hydrogen flow ratio is 0 / 100;

[0078] (4) Add filament current, adjust the filament voltage so that the temperature is about 2100°C, adjust the distance between the filament and the substrate so that the substrate temperature is about 800°C, turn on the power suppl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
radiusaaaaaaaaaa
Login to View More

Abstract

The invention discloses a plasma depositing and etching system. The system comprises a cavity body, a cathode objective table which is arranged in the cavity body, an upper grid and a heating device. The system further comprises a cooling device for cooling the upper grid and a grid bias power supply for providing bias voltage between the upper grid and the heating device as well as between the heating device and a cathode. A plurality of filaments which are arranged in parallel and uniformly distributed are adopted as a heating device, so that the heating efficiency and heating stability are improved, the large-area uniform temperature field distribution is realized, and conditions are provided for depositing a large-area film sample; the upper grid is arranged at the upper parts of the filaments so as to promote the plasma formation, the build-up luminance threshold value is lowered, and the voltage of the grid and the concentration of the plasmas can be regulated so as to increase the technological controllability; a circulation water cooling system is arranged on the upper grid, the cathode and the side wall of the cavity body so as to ensure the stability of a device; and a grid bias power supply control system is added, so that the stable output of required voltage of the system is ensured, and etching function requirements are satisfied.

Description

technical field [0001] The invention relates to the fields of plasma deposition and etching, in particular to a plasma deposition and etching system which can integrate the functions of material deposition and preparation and the etching and processing functions of micro-nano structures. Background technique [0002] Hot filament chemical vapor deposition (HFCVD) is a common chemical vapor deposition method. This method has the advantages of simple equipment and process, low preparation cost, good stability, many process controllable parameters, easy control of film formation process and growth rate. Fast and many other advantages. In the process of material preparation and growth using HFCVD, if a bias voltage is applied between the filament and the sample, the surface of the sample will be etched. This etching process coexists with the growth process, and it is this composite process that makes HFCVD The deposition has certain controllability, for example, the particle si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/50H01L21/3065H01L21/205
Inventor 李俊杰顾长志李云明田士兵李林
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com