Semiconductor Electronic Devices

Abstract

The invention discloses a high-performance semiconductor electronic device which comprises a heterojunction structure and a conductive electrode which are distributed on a substrate, wherein the conductive electrode comprises a source, a drain and a grid; the heterojunction structure mainly comprises an upper layer heterogeneous material and a lower layer heterogeneous material; quantum well limited two-dimensional electron gas is formed at an interface of the upper layer heterogeneous material and the lower layer heterogeneous material; the semiconductor electronic device is in a tabletop isolation structure; no buffer layer exists in areas other than a tabletop; a dielectric layer is arranged at least between the conductive electrode and a side wall of the tabletop; and at least an area, corresponding to the tabletop, in the substrate consists of an insulating or semi-insulating material. Preferably, a channel array can be distributed on the upper end face of the heterojunction structure, and comprises a plurality of micro and nano channels distributed in parallel. The leakage problems of the device caused by a buffer layer defect, buffer layer and substrate interface state carriers and the like can be effectively reduced or prevented, so that the property of the device can be improved effectively, and the high-performance semiconductor electronic device is suitable for various semiconductor electronic devices based on heterojunction.

Description

technical field [0001] In particular, the present invention relates to a semiconductor electronic device capable of reducing buffer layer and substrate leakage. Background technique [0002] HEMT has become one of the important devices in the high-frequency microwave field because of its excellent characteristics such as high electron mobility and fast device speed. In recent years, with the continuous development of wide-bandgap semiconductor gallium nitride (GaN) materials, people have a new understanding of the performance of GaN-based HEMTs. Due to the excellent properties of GaN materials such as high mobility, fast electron saturation drift, high critical breakdown electric field strength, and high operating junction temperature, GaN-based HEMTs are not only suitable for high-frequency and high-power applications, but also suitable for low-frequency, high-voltage, and high-power applications. [0003] Generally speaking, there are two factors that lead to leakage in t...

AI Technical Summary

Problems solved by technology

During the epitaxy process of GaN materials, due to the existence of threading dislocations and compound dislocations, the probability of metal and donor impurities (O, Si, etc.) diffusing to the buffer layer along threading dislocations increases, providing background electrons to the buffer layer. , causing the leakage of the buffer layer, which leads to the deterioration of the device's turn-off characteristics and the decrease of the breakdown voltage

However, obtaining high-resistance characteristics by introducing deep-level acceptor impurities, edge dislocations, screw dislocations, or other defects as acceptor compensation will introduce additional defects, and these defects will cause current leakage and trap effects. This will in turn affect the reliability of AlGaN / GaNHEMT devices

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