Nonvolatile memory element, production method therefor, nonvolatile memory unit, and design assistance method for nonvolatile memory element

Abstract

This nonvolatile memory element is provided with a resistance change layer (116) which is interposed between a bottom electrode (105) and an upper electrode (107) and in which the resistance value reversibly varies on the basis of electrical signals applied between both of the electrodes. The resistance change layer (116) includes at least two layers that are a first resistance change layer (1161) and a second resistance change layer (1162). The first resistance change layer (1161) contains a first transition metal oxide (116b). The second resistance change layer (1162) contains a second transition metal oxide (116a) and a transition metal compound (116c). The oxygen content of the second transition metal oxide (116a) is lower than that of the first transition metal oxide (116b). The transition metal compound contains oxygen and nitrogen, or oxygen and fluorine. The second transition metal oxide (116a) and the transition metal compound (116c) are in contact with the first resistance change layer (1161).

Description

technical field [0001] The present invention relates to a nonvolatile memory element, a manufacturing method thereof, a nonvolatile memory device, and a design support method for a nonvolatile memory element, and in particular, to a device capable of changing its resistance by application of an electric pulse. A variable resistance nonvolatile memory element having a variable resistance layer in which the resistance value is changed and the changed resistance value is maintained, and a method for manufacturing the same. Background technique [0002] In recent years, with the development of digital technology, electronic devices such as portable information devices and information home appliances have been further functionalized. Therefore, there are increasing demands for increasing the capacity, reducing the writing power, speeding up the writing / reading time, and increasing the lifetime of the nonvolatile memory element. [0003] Contrary to such a request, it can be said...

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Problems solved by technology

Therefore, when a conductive path is formed on the transition metal oxide (resistance change film) of the resistance change element after manufacture, a voltage whose absolute value is higher than the usual drive voltage for resistance change is applied once to several times. In the initialization of the variable resistance film, compared with the case of having small protrusions on the electrode, the initialization voltage (initialization voltage) needs to be higher, which hinders initialization at a low voltage in the variable resistance element.

[0018] In addition, although the initializing voltage can be lowered if the film thickness of the second variable resistance layer is reduced, it is not desirable from the viewpoint of reliability.

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