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Array waveguide grating demodulation integration micro system

An arrayed waveguide grating and microsystem technology, which is applied to the coupling of optical waveguides, light guides, optics, etc., can solve the problems of large size and high price of fiber Bragg grating demodulation systems, and achieve compact structure, low cost, and improved stability. and reliability effects

Inactive Publication Date: 2013-08-07
TIANJIN POLYTECHNIC UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of large volume and high price of the fiber Bragg grating demodulation system, and provide an arrayed waveguide grating demodulation integrated microsystem with compact structure, high demodulation accuracy, fast demodulation speed and low cost

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  • Array waveguide grating demodulation integration micro system

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Embodiment Construction

[0032] Specific embodiments of the present invention will be described in detail below in conjunction with technical solutions and accompanying drawings.

[0033] The invention integrates the LED light source, 2×2 optical waveguide coupler, fiber Bragg grating array, 1×8 array waveguide grating, and photodetector array, figure 1 It is a schematic diagram of an arrayed waveguide grating demodulation integrated microsystem, and the specific implementation steps are:

[0034] 1. C-band on-chip LED light source

[0035] The basic structure of the InP-based C-band on-chip LED light source is as follows: figure 2 As shown, four layers are continuously grown on the InP substrate, which are n-InP buffer layer, InGaAsP active layer, p-InP confinement layer and p-InGaAsP top layer. The layer thickness is 0.1 μm, the thickness of the p-InP confinement layer is 0.5 μm, and the thickness of the p-InGaAsP top layer is 0.5 μm. Using Silvaco simulation software to model and simulate the L...

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Abstract

The invention discloses an array waveguide grating demodulation integration micro system, which comprises a light-emitting diode (LED) light source on a C wave band sheet, a 2*2 optical waveguide coupler, a fiber bragg grating array, a 1*8 array waveguide grating and a photoelectric detector array, wherein the coupler and the array waveguide grating are manufactured on an SOI (silicon on insulator) wafer by utilizing an electron beam lithography and reaction coupled plasma process; light sent out from an LED light source manufactured by an InP material is coupled to a coupler waveguide 1 through the grating, and then enters the fiber bragg grating array through a coupler waveguide 2; reflected light of the fiber bragg grating array enters the array waveguide grating through a coupler waveguide 3; and waveguide light output by the array waveguide grating is also coupled to an InGaAs photoelectric detector array couple above the array waveguide grating through the grating. The array waveguide grating demodulation integration micro system has the advantages of being compact in structure, integrated in device, low in cost, high demodulation precision and high in speed, improving the stability and reliability of a light path and the like.

Description

technical field [0001] The invention relates to the research on the heterogeneous integration of arrayed waveguide grating demodulation microsystems, and belongs to the field of optoelectronic integration. Background technique [0002] The research on fiber Bragg grating sensing technology abroad is earlier, and the commercialization and engineering of fiber Bragg grating sensors have been basically realized in developed countries. At present, the most widely used field of fiber Bragg grating sensors in foreign countries is the safety monitoring of bridges. At the same time, the application of fiber Bragg grating sensing technology has gradually extended to various industrial fields such as electric power, petroleum, and petrochemical. Domestic research on fiber Bragg grating sensors began in the late 1970s. At present, hundreds of units have carried out research work in this field. Fiber Bragg grating sensors have been applied in some industries in my country, and can be u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/124G02B6/34
Inventor 李鸿强董夏叶白曜亭李洋刘宇周文骞
Owner TIANJIN POLYTECHNIC UNIV