Method for carrying out configuration optimization on chemical mechanical grinding fluid

Abstract

The invention provides a method for carrying out configuration optimization on chemical mechanical grinding fluid. The method comprises the following steps of selecting process conditions of chemical mechanical grinding, acquiring types, sizes, concentration and charge distribution of grinding particles and a high molecular surfactant in the grinding fluid and using the types, the sizes, the concentration and the charge distribution as current grinding fluid configuration data; according to the current grinding fluid configuration data and a high molecular reference action point model, acquiring corresponding grinding fluid dispersion characteristic data; judging whether the grinding fluid dispersion characteristic data meets the dispersion stability standard and if no, regulating the current grinding fluid configuration data and returning to the step of acquiring the grinding fluid dispersion data according to the current grinding fluid configuration data after regulating; and if yes, using the current grinding fluid configuration data as optimization data and according to the optimization data, carrying out configuration to obtain the optimized grinding fluid. When the method provided by the invention is utilized to carry out configuration optimization on the chemical mechanical grinding fluid, the optimization process is simplified, not only can the grinding effect be ensured, but also cost of implementing the process can be reduced, and the period can be shortened.

Description

technical field [0001] The invention relates to the technical field of ultrafine processing of integrated circuit chips, in particular to a method for optimizing configuration of chemical mechanical polishing liquid. Background technique [0002] With the continuous reduction of the feature size of the integrated circuit manufacturing process, the integrated circuit manufacturing technology has encountered unprecedented challenges. In particular, in the manufacturing process of mainstream semiconductor devices below 32 / 28nm, the flatness of the circuit surface is an important factor affecting the depth of focus of lithography and the yield rate. Therefore, how to realize ultra-fine machining on the surface of semiconductor chips has become an important technical problem in the current integrated circuit manufacturing. At present, the most widely used planarization technology to achieve ultra-fine processing of chip surface is chemical mechanical polishing (CMP) technology. ...

AI Technical Summary

Problems solved by technology

[0008] The problem to be solved by the present invention is to provide a method for optimizing the configuration of chemical mechanical polishing liquid, so that the abrasive particles participating in chemical mechanical polishing will not damage the grinding effect due to the agglomeration effect, and can overcome the problem of optimizing the grinding by existing experimental measurement methods. Problems such as high cost and long cycle caused by liquid configuration

Images