Apparatus and method for production of aluminum nitride single crystal

A technology for manufacturing devices and aluminum nitride, which is applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., and can solve problems such as limited materials

Inactive Publication Date: 2013-08-14
FUJIKURA LTD +1
View PDF13 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the materials that can be used for the crucible are limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for production of aluminum nitride single crystal
  • Apparatus and method for production of aluminum nitride single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0055] use figure 1 The production apparatus shown produces an aluminum nitride single crystal as follows. That is, firstly, it is assumed that the cover 18 of the heat insulating material 9 made of carbon is removed, the cover 15 of the heating element 8 made of simple tungsten is removed, and the cover of the growth container 7 made of tantalum carbide (TaC) is removed. 12. Then, aluminum nitride powder as a raw material is accommodated in the accommodation portion 10 of the growth vessel 7 . On the other hand, a seed crystal 13 having a diameter of 2 inches and a thickness of 0.5 mm was carried on the cover 12 with an adhesive. At this time, 6H-SiC (0001) was used as a seed crystal.

[0056] Then, the housing portion 10 of the main body portion 11 of the growth container 7 is sealed by the lid body 12 . Next, the main body 14 of the heating element 8 is sealed by the lid 15 , and finally the main body 17 is sealed by the lid 18 .

[0057] Then, the crystal growth unit ...

Embodiment 2）

[0060] As shown in Table 1, the seed crystal was changed to the aluminum nitride crystal produced in Example 1, the pressure in the housing part was changed to 250 Torr, the temperature of the growth part and the temperature of the raw material part were changed to 2000 ° C and 2100 ° C, respectively, except Otherwise, aluminum nitride crystals were grown in the same manner as in Example 1.

Embodiment 3）

[0062] As shown in Table 1, the seed crystal was changed to the aluminum nitride single crystal prepared in Example 1, the pressure in the housing part was changed to 500 Torr, and the temperature of the growth part and the raw material part were changed to 2200 ° C and 2320 ° C, respectively. Except for this, an aluminum nitride single crystal was grown in the same manner as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten.

Description

technical field [0001] The present invention relates to a manufacturing device and a manufacturing method of an aluminum nitride single crystal. Background technique [0002] Aluminum nitride-based semiconductors have a wide bandgap of 6.2 eV, and thus are expected to be applied to blue and ultraviolet light emitting devices, white LEDs, high withstand voltage and high frequency power supply ICs, and the like. In addition, the lattice mismatch between aluminum nitride single crystal and gallium nitride is as small as 2.4%, so it is also expected to be used as a growth substrate when growing gallium nitride-based semiconductors. [0003] Various methods are known as methods for producing such an aluminum nitride single crystal. For example, a flux method is known as a solution method, and a MOVPE method, a hydride vapor phase epitaxy (HVPE) method, a sublimation method, etc. are known as a gas phase method. Among them, the sublimation method is an effective method for produ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38
CPCC30B23/02C30B23/00C30B29/403C30B23/066
Inventor 镰田弘之加藤智久长井一郎三浦知则
Owner FUJIKURA LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap