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A kind of preparation method of microstructure silicon avalanche diode

A technology of micro-structuring silicon and silicon avalanche, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., to achieve the effect of low detection noise

Inactive Publication Date: 2016-04-13
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But no one has yet used microstructured silicon materials to make microstructured silicon avalanche diodes

Method used

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  • A kind of preparation method of microstructure silicon avalanche diode
  • A kind of preparation method of microstructure silicon avalanche diode

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Experimental program
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Embodiment 1

[0024] Such as figure 1 As shown in, the preparation method of the microstructured silicon avalanche diode provided by this embodiment includes the following steps:

[0025] (1) Microstructured silicon is obtained by doping sulfur on the monocrystalline silicon substrate by laser etching; the specific steps of manufacturing the microstructured silicon include: placing the monocrystalline silicon in an acetone solution for several minutes to clean the surface; Take out the cleaned silicon wafer and load it on the stage of the vacuum chamber; the pressure of the vacuum chamber is 10 3 Pa; open the inflation valve, flush into the background gas SF at a flow rate of 40 sccm 6 , until the pressure is 0.5pa; after the vacuum chamber pressure is stable, turn on the femtosecond (or nanosecond) laser and adjust the laser intensity to 1.8J / cm 2 (D=20μm, 248nm, 25ns, that is, the diameter of the laser beam is 20μm, the wavelength is 248nm, and the action time is 25ns). After all silic...

Embodiment 2

[0029] Such as figure 2 Shown, a kind of microstructure silicon avalanche diode array, the microstructure silicon avalanche diode that adopts the preparation method of microstructure silicon avalanche diode in embodiment 1 to make G-APD array, make the corresponding circuit array of G-APD array simultaneously , and connect the G-APD array and the circuit array by bridging to make a microstructured silicon avalanche diode array, such as figure 2 Shown in panels A and B.

[0030] Wherein the G-APD array and the circuit array are respectively arranged on different substrates.

[0031] The bridge is to connect the G-APD array and the circuit array face-to-face, and the substrate in the G-APD array is etched away by electrochemical methods, and then the joints of each circuit in the circuit array are etched out, and finally the joints of each circuit are etched. The part is connected with the junction part of each microstructure silicon avalanche diode in the G-APD array.

[0...

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Abstract

The invention discloses a method for preparing a microstructured silicon avalanche diode, which comprises the following steps: (1) doping sulfur on a single crystal silicon substrate by laser etching to obtain microstructured silicon; (2) microstructured silicon A layer of SiO2 protective layer is coated on the surface; (3) An anode lead and a cathode lead are respectively drawn out on the upper part and the lower part of the single crystal silicon substrate to make a microstructured silicon avalanche diode. The microstructured silicon avalanche diode made by this method can be made into a Geiger mode (G-APD) avalanche diode array detection device, which has high responsivity, single-photon detection sensitivity and outstanding picosecond time resolution. The response range can be extended to the mid-infrared band.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon, and in particular relates to a method for preparing a microstructured silicon avalanche diode. Background technique [0002] Microstructured silicon materials are materials that form intermediate energy levels by heavily doping chalcogen elements in silicon elements. Studies have found that microstructured silicon can almost completely absorb light in the visible light band through multiple reflections and increasing the light absorption surface; due to impurity elements Forming an intermediate energy level, the absorption rate in the near-infrared band can also reach more than 80%. At present, detectors made of ordinary silicon-based materials have not high responsivity in the near-infrared band. The excellent absorption characteristics of microstructured silicon in the near-infrared part are considered to have great application prospects in the fields of photovoltaic cells, sensing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈长水韩田
Owner SOUTH CHINA NORMAL UNIVERSITY