A kind of preparation method of supersaturated doped semiconductor thin film

Abstract

The invention discloses a method for preparing a supersaturated-doping semiconductor thin film. The method includes the following steps: step one, a substrate is chosen; step two, the surface of the substrate is cleaned up; step three, at a low growth temperature, a semiconductor amorphous thin film is deposited on the surface of the substrate, wherein through control over a deposition speed ratio of atoms, a supersaturated-doping semiconductor amorphous thin film is obtained; step four, laser annealing is carried out on the supersaturated-doping semiconductor amorphous thin film by the utilization of ultra-fast lasers, and the preparation of the supersaturated-doping semiconductor thin film is completed. According to the preparation method, the molecular beam epitaxy technology is used for preparing the supersaturated-doping thin film which is even in doping concentration. Depth distribution of impurities in the prepared supersaturated-doping silicon thin film is very even.

Description

Technical field

[0001] The invention belongs to the field of semiconductor thin film materials, and specifically relates to a preparation method of a supersaturated doped semiconductor thin film. Background technique

[0002] In recent years, people have developed a strong research interest in supersaturated doped semiconductor materials. The so-called supersaturated doped semiconductor material means that the doping concentration of the dopant inside the semiconductor material has begun to be greater than its thermodynamic equilibrium solubility. If the semiconductor material is doped with deep-level impurities, the doping atoms can form impurity states in the forbidden band of the semiconductor material. In this case, as the concentration of doped atoms increases, the isolated impurity states can be coupled with each other, and finally an impurity band is formed, which is the so-called intermediate band semiconductor material. Inserting intermediate bands in common semiconduc...

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