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Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof

A zinc oxide nanorod, zinc oxide technology, applied in zinc oxide/zinc hydroxide, nanotechnology, instruments, etc., can solve the problem that there is no good solution for the control and preparation of zinc oxide nanorods, and the size of nanorods is difficult to control and difficult to control. Industrial production and other issues, to achieve the effect of strong versatility and operability, good sensitivity and low price

Inactive Publication Date: 2013-09-18
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, although people have been able to synthesize zinc oxide nanostructures with different shapes, the methods used are limited to chemical and physical vapor deposition methods. These methods are too expensive and have poor repeatability, making it difficult to achieve industrial production.
Even though some researchers have prepared zinc oxide submicron rod aggregates by chemical methods, it is difficult to control the obtained structure and the size of nanorods. good solution

Method used

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  • Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof
  • Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof
  • Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0051] The following describes the tower-shaped layered zinc oxide nanorods and the preparation method thereof.

[0052] (1) Use a balance to weigh zinc oxide and carbon powder with a weight ratio of 2:1, mix them evenly and put them into a quartz boat;

[0053] (2) Place the clean silicon wafer on top of the quartz boat, with the (111) side of the silicon wafer facing down, so that the distance between the silicon wafer and the mixture of zinc oxide and carbon powder in the quartz boat is 1 to 5 mm, and then put In the reaction furnace, the quartz boat and the silicon wafer are located at the center of the reaction furnace;

[0054] Among them, the silicon wafers are pre-cleaned by standard cleaning methods, specifically: first cut the silicon wafers into small pieces, then put them face up into a beaker filled with absolute ethanol, and ultrasonicate at 100Hz, and take them out after half an hour of ultrasonication , blow dry with nitrogen, and then put it into absolute eth...

Embodiment 2

[0060] The following describes the tower-shaped layered zinc oxide nanorods and the preparation method thereof.

[0061] (1) Use a balance to weigh zinc oxide and carbon powder with a weight ratio of 1:1, mix them evenly and put them into a quartz boat;

[0062] (2) Place the clean silicon wafer on top of the quartz boat, with the (100) side of the silicon wafer facing down, and the distance between the silicon wafer and the mixture of zinc oxide and carbon powder in the quartz boat is 1 to 5 mm, and then put it into the reaction In the furnace, the quartz boat and silicon wafer are located in the center of the reaction furnace;

[0063] Wherein, the silicon wafer is cleaned by the standard cleaning method described in Example 1 in advance;

[0064] (3) Vacuumize the reaction furnace, and feed nitrogen into the reaction furnace to maintain the pressure in the furnace to be about 50mbar, wherein the feed rate of nitrogen is 80sccm; at the same time, open the opening program of...

Embodiment 3

[0069] The following describes the tower-shaped layered zinc oxide nanorods and the preparation method thereof.

[0070] (1) Take zinc oxide and carbon powder with a weight ratio of 4:1 by a balance, mix them uniformly and put them into a quartz boat;

[0071] (2) Place a clean silicon wafer on top of the quartz boat, with the (001) side of the silicon wafer facing down, and the distance between the silicon wafer and the mixture of zinc oxide and carbon powder in the quartz boat is 1 to 5 mm, and then put it into the reaction In the furnace, the quartz boat and silicon wafer are located at the center of the reactor;

[0072] Wherein, the silicon wafer is cleaned by the standard cleaning method described in Example 1 in advance;

[0073] (3) Vacuumize the reaction furnace, and feed nitrogen into the reaction furnace to maintain the pressure in the furnace to be about 100mbar, wherein the feed rate of nitrogen is 100sccm; at the same time, open the opening program of the reacti...

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Abstract

The invention relates to a preparation method for a tower-shaped layered zinc oxide nanometer rod. The method comprises the following steps: weighing and uniformly mixing zinc oxide and carbon powder with certain mass, putting an obtained mixture in a quartz boat, disposing a silicon chip above the quartz boat and putting the quartz boat and the silicon chip into a reacting furnace together; then carrying out vacuum-pumping, introducing nitrogen into the reacting furnace and heating the reacting furnace; and stopping introduction of nitrogen and heating when the reacting furnace is heated to a certain temperature and introducing oxygen into the reacting furnace for a reaction, wherein oxygen passes through cooling water and then enters into the reacting furnace, and a target product, i.e., the tower-shaped layered zinc oxide nanometer rod, is obtained after the reaction is ended. The preparation method has the advantages of simple process, safety and good versatility and operability and is favorable for large scale production. The invention further relates to the tower-shaped layered zinc oxide nanometer rod and application of the same in a high sensitivity gas sensor, a pressure transducer and a field emitter.

Description

technical field [0001] The invention relates to a tower-shaped layered zinc oxide nanorod and a preparation method and application thereof. Background technique [0002] Semiconductor nanomaterials are important basic materials for making transistors, integrated circuits, electronic devices and optoelectronic devices, supporting the development of the electronic information industry. The semiconductor nanomaterials that we often hear and see mainly include Si, GaN and GaAs, etc., but these nanomaterials consume a lot of resources, some nanomaterials pollute the environment, and their high prices also largely limit The application in the semiconductor field will affect the development of the semiconductor industry in the future. Therefore, it is urgent to find a new type of semiconductor nanomaterials to solve these problems to a certain extent. [0003] Zinc oxide (ZnO) is an important IVB (II-VI) group wide bandgap semiconductor material (hexagonal wurtzite structure, ene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/03B82Y40/00G01N33/00G01L11/00H01J1/304
Inventor 王兵江鹏王中林
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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