1.3 μm wavelength non-polarized high-efficiency light-emitting quantum dot device and design method
A luminous quantum, high-efficiency technology, used in laser parts, lasers, semiconductor devices, etc., to achieve the effect of high-efficiency design
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[0022] combine figure 1 , a non-polarized high-efficiency light-emitting quantum dot device with a wavelength of 1.3 μm of the present invention, comprising an annular air hole photonic crystal microcavity 1, a quantum dot layer 2, an omnidirectional mirror structure 3, and a substrate 4 sequentially arranged from top to bottom , wherein the annular air hole photonic crystal microcavity 1 is a photonic crystal microcavity with triangular lattice annular air holes, and the structure type of the photonic crystal microcavity is L3 type, that is, three units are missing along the X axis at the center of the photonic crystal, and the photonic crystal microcavity The holes 7 on the left and right sides of the defect in the crystal microcavity are air holes, and the material of the photonic crystal microcavity is GaAs, such as figure 1 shown in (b).
[0023] The quantum dot layer 2 is a GaAs material layer doped with deposited InAs. The omnidirectional mirror structure 3 is made of...
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