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1.3 μm wavelength non-polarized high-efficiency light-emitting quantum dot device and design method

A luminous quantum, high-efficiency technology, used in laser parts, lasers, semiconductor devices, etc., to achieve the effect of high-efficiency design

Inactive Publication Date: 2015-11-04
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in previous studies, common photonic crystal microcavities are usually air hole arrays or dielectric column arrays, and due to their structure, only one polarized light (transverse magnetic mode (TM) or Transverse electric mode (TE)) has a good quality factor, it is difficult to have a high quality factor for two polarized lights of the same wavelength

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  • 1.3 μm wavelength non-polarized high-efficiency light-emitting quantum dot device and design method
  • 1.3 μm wavelength non-polarized high-efficiency light-emitting quantum dot device and design method
  • 1.3 μm wavelength non-polarized high-efficiency light-emitting quantum dot device and design method

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Embodiment Construction

[0022] combine figure 1 , a non-polarized high-efficiency light-emitting quantum dot device with a wavelength of 1.3 μm of the present invention, comprising an annular air hole photonic crystal microcavity 1, a quantum dot layer 2, an omnidirectional mirror structure 3, and a substrate 4 sequentially arranged from top to bottom , wherein the annular air hole photonic crystal microcavity 1 is a photonic crystal microcavity with triangular lattice annular air holes, and the structure type of the photonic crystal microcavity is L3 type, that is, three units are missing along the X axis at the center of the photonic crystal, and the photonic crystal microcavity The holes 7 on the left and right sides of the defect in the crystal microcavity are air holes, and the material of the photonic crystal microcavity is GaAs, such as figure 1 shown in (b).

[0023] The quantum dot layer 2 is a GaAs material layer doped with deposited InAs. The omnidirectional mirror structure 3 is made of...

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Abstract

The invention discloses a polarization-free high-efficiency luminescence quantum dot device with the wave length of 1.3 micrometers. An omnidirectional reflector structure (DBR) is deposited on a base, then quantum dots (InAs / GaAs) are deposited and manufactured, and then a material layer for etching a microcavity is continuously deposited. An electron beam exposure system (EBL) and inductive coupled plasma etching equipment (ICP) are used, and a designed circular air vent hole photonic crystal microcavity is manufactured on materials on a top layer. The designed quantum dot device is used, and a transverse magnetic mode (TM) with the wave length of 1.3 micrometers and a transverse electric mode (TE) with the wave length of 1.3 micrometers can be made to both have high quality factors and high luminous efficiency. The polarization-free high-efficiency luminescence quantum dot device can be effectively transmitted on the transverse magnetic mode (TM) with the wave length of 1.3 micrometers and the transverse electric mode (TE) with the wave length of 1.3 micrometers.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a non-polarization high-efficiency light-emitting quantum dot device with a wavelength of 1.3 μm and a design method thereof. Background technique [0002] In 1987, both E.Yablonovitch and S.John proposed that the energy band structure phenomenon that electrons are subject to periodic potential scattering also exists in photon systems. When electromagnetic waves move under the periodic arrangement of dielectric coefficients, some wave bands will also Due to destructive interference, it cannot propagate in the system, forming a photonic energy gap. This kind of substance with a periodic refractive index is called a photonic crystal. When the lattice constant or period of the photonic crystal is equivalent to the order of magnitude of the wavelength of the photon being operated, it will cause the so-called strong scattering effect, resulting in a photon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01S5/343
Inventor 贾巍李相银邓君本杰明·里德陈振星王旭武红罗伯特·泰勒亚伦·丹尼尔蒋立勇
Owner NANJING UNIV OF SCI & TECH