Laser active region, semiconductor laser and manufacturing method thereof

Abstract

The invention discloses an active area of a laser unit. The active area comprises a multiple-quantum well structure, wherein a potential well layer in the multiple-quantum well structure is made from InGaAsP, and a barrier layer in the multiple-quantum well structure is made from InGaAlAs; a cycle of the multiple-quantum well structure is K, and K ranges from 3 to 20. Furthermore, the invention discloses a semiconductor laser unit and a manufacturing method of the laser unit, wherein the semiconductor laser unit comprises the active area. The semiconductor laser unit provided by the invention has a lower threshold current and higher characteristic temperature, to realize no-refrigeration work; the laser unit has relatively high differential gain, and can provide a laser output in a Tencent Messenger (TM) mode; the laser unit has a relatively high conduction band order, so as to simultaneously restrict injected carriers effectively and distribute the carriers among wells uniformly and enhance the modulation characteristic of the laser unit.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an active region of a laser, a semiconductor laser including the active region and a manufacturing method thereof. Background technique [0002] In the field of high-speed optical fiber communication, 1310nm InGaAsP / InP strained quantum well lasers have been extensively and deeply studied. Theory predicts that compared with lattice matching and compressive strain quantum wells, the transverse magnetic field (TM) mode gain provided by the tensile strain quantum well exceeds the transverse electric field (TE) mode gain provided by the compressive strain quantum well, and the tensile strain quantum well can obtain more Optimal device performance, such as lower threshold current, higher differential gain and smaller Auger recombination rate, etc. [0003] At present, the commercialized 1310nm semiconductor laser is mainly based on the InGaAsP / InP material system. However...

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Problems solved by technology

[0003] At present, the commercialized 1310nm semiconductor laser is mainly based on the InGaAsP / InP material system. However, it is still difficult for the InGaAsP / InP laser to work at a temperature above 85°C without refrigeration.

In order to solve this problem, another alternative material system that covers the optical band centered at 1310nm is being developed is InGaNAs / GaAs. So far, it is still difficult to increase the N component to 10% for the InGaNAs / GaAs material system. And doping N atoms is easy to introduce defects, so the laser based on this material system is still in its infancy

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