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Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method

A silicon wafer cleaning and cleaning solution technology, which is applied in the direction of chemical instruments and methods, detergent compositions, organic cleaning compositions, etc., can solve the problems of weak organic matter removal ability, operator safety threat, and difficulty in completely removing cut inorganic particles

Active Publication Date: 2013-10-02
大连奥首科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] As mentioned above, although there are a variety of cleaning solutions in the prior art, there are still various defects, such as weak ability to remove organic matter; it is difficult to completely remove inorganic substances such as silicon carbide and silicon dioxide adsorbed during cutting, grinding and corrosion. Particles; use of acid and / or oxidizers, a safety threat to the operator, and serious environmental pollution, etc.

Method used

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  • Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method
  • Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method
  • Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] (1) In parts by weight, weigh 0.01 parts by weight of fluorosurfactant C 6 f 13 CH 2 CH 2 O(C 2 h 4 O) 6 H (where C 6 f 13 Perfluoron-hexyl), 5 parts by weight polyoxypropylene polyoxyethylene polyether C 10 h 21 O(C 3 h 8 O) 5 (C 2 h 4 O) 5 R (where C 10 h 21 is n-decyl, R is methyl), 10 parts by weight of inorganic alkali potassium carbonate, 0.5 parts by weight of complexing agent sodium citrate, 0.05 parts by weight of cellulose derivative carboxymethyl cellulose, and 80 parts by weight of at least 18 MΩ pure water;

[0077] (2) Add the pure water of the above-mentioned parts by weight into the stirring tank, then add the inorganic base and the complexing agent of the above-mentioned parts by weight in sequence, and stir until uniform and transparent at a speed of 70rpm / min;

[0078] (3) In the homogeneous transparent mixture in the step (2), add the polyoxypropylene polyoxyethylene polyether, the fluorine-containing surfactant, the cellulose deriv...

Embodiment 2

[0080] (1) In parts by weight, weigh 0.05 parts by weight of fluorosurfactant C 8 f 17 CH 2 CH 2 O(C 2 h 4 O) 8 H (where C 8 f 17 Perfluoron-octyl), 8 parts by weight polyoxypropylene polyoxyethylene polyether C 12 h 25 O(C 3 h 8 O)7 (C 2 h 4 O) 8 R (where C 12 h 25 is n-dodecyl, R is isopropyl), 8 parts by weight of inorganic alkali sodium metasilicate, 2 parts by weight of complexing agent sodium gluconate, 0.08 parts by weight of cellulose derivative sodium carboxypropyl cellulose and 70 parts by weight Parts of pure water with a resistance of at least 18MΩ;

[0081] (2) Add the pure water of the above-mentioned parts by weight into the stirring tank, then add the inorganic base and the complexing agent of the above-mentioned parts by weight in sequence, and stir until uniform and transparent at a speed of 70rpm / min;

[0082] (3) In the homogeneous transparent mixture in the step (2), add the polyoxypropylene polyoxyethylene polyether, the fluorine-containi...

Embodiment 3

[0084] (1) In parts by weight, weigh 0.2 parts by weight of fluorosurfactant C 10 f 21 CH 2 CH 2 O(C 2 h 4 O) 10 H (where C 10 f 21 Perfluoron-decyl), 30 parts by weight polyoxypropylene polyoxyethylene polyether C 14 h 29 O(C 3 h 8 O) 9 (C 2 h 4 O) 11 R (where C 14 h 29 is n-tetradecyl, R is tert-butyl), 1 weight part of inorganic base potassium bicarbonate, 0.8 weight part of complexing agent 8-hydroxyquinoline, 5 weight parts of cellulose derivative hydroxymethyl cellulose and 75 weight parts Parts of pure water with a resistance of at least 18MΩ;

[0085] (2) Add the pure water of the above-mentioned parts by weight into the stirring tank, then add the inorganic base and the complexing agent of the above-mentioned parts by weight in sequence, and stir until uniform and transparent at a speed of 70rpm / min;

[0086] (3) In the homogeneous transparent mixture in the step (2), add the polyoxypropylene polyoxyethylene polyether, the fluorine-containing surfact...

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Abstract

The invention relates to a silicon wafer cleaning fluid, a preparation method and use of the silicon wafer cleaning fluid and a silicon wafer cleaning method by using the cleaning fluid. The cleaning fluid comprises fluorinated tenside, PPOEO, inorganic base, complexant, cellulose derivatives and purified water, has the ability to clean out the silicon wafer excellently, can completely remove pollutants, and improves the cleanliness of electronic components; besides, the cleaning fluid has the advantages that the preparation is simple, the cost is low, the environment-friendly effect is realized and the like, and has the wide study value and technical application prospect.

Description

technical field [0001] The invention relates to a cleaning solution for electronic components, in particular to a cleaning solution for silicon wafers, a preparation method, an application and a method for cleaning silicon wafers using the cleaning solution, and belongs to the field of industrial cleaning of high-precision electronic components. Background technique [0002] With the rapid development of the electronics industry for decades, especially in recent years, there are increasingly stringent requirements for the quality and performance of electronic components. Only in this way can the precision, high performance and satisfaction of electronic components, especially integrated circuits, be guaranteed Demanding industrial application demands and consumer demands. [0003] In addition, with the intensification of energy crisis and environmental protection issues, people's interest in renewable energy is increasing, and a lot of in-depth research has been done on it. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/825C11D3/37H01L21/02
Inventor 侯军李波熊展瑜
Owner 大连奥首科技有限公司