Quasi-one-dimensional nanometer resistive random access memory and preparation method based on chalcogen cuprous compounds

Abstract

The invention discloses a quasi-one-dimensional nanometer resistive random access memory and a preparation method based on chalcogen cuprous compounds. The method comprises the following steps: firstly, uniformly dispersing a chalcogen cuprous compound quasi-one-dimensional nanometer structure on an insulation substrate ; evaporation plating a metal Cu electrode at one end of the chalcogen cuprous compound quasi-one-dimensional nanometer structure through the one-time ultraviolet exposure photoetching and the electron beam evaporation; evaporation plating an inert metal electrode at the other end of the chalcogen cuprous compound quasi-one-dimensional nanometer structure through the second-time positioning ultraviolet exposure photoetching and the electron beam evaporation. According to the invention, the chalcogen cuprous compound quasi-one-dimensional nanometer structure is applied to the nanometer memory for the first time, the performance is stable and reliable, the power consumption is low, the preparation method is simple and feasible, and the quasi-one-dimensional nanometer resistive random access memory is hopeful to be applied to a novel nanometer electronic device as a high-density storage unit.

Description

technical field [0001] The invention relates to the technical field of preparation of a nanometer memory, more specifically to a quasi-one-dimensional nanostructure resistive variable memory based on a chalcogenide cuprous compound and a preparation method thereof. Background technique [0002] With the development of integrated circuit technology, the traditional silicon-based technology has gradually approached its limit size, which makes people demand for new and high-efficiency nanoelectronic devices, especially high storage density, high speed, low power consumption, and non-volatile memory devices. growing day by day. Memory is one of the most important types. With the gradual popularity of portable electronic devices such as mobile phones, digital cameras, media players, and notebook computers, high storage density, high speed, low power consumption, and non-volatile memory have attracted more and more attention. Much attention. At present, the non-volatile memory o...

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Problems solved by technology

[0004] Resistive memory is an electronic component with a macroscopic structure of a thin film or above a thin film, which has the disadvantages of large equipment volume, high power consumption, inability to build small or flexible integrated circuits, easy conduction between electrodes, and unstable product performance. And the shortcomings of complicated manufacturing process and high manufacturing cost

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