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A kind of preparation method of silver-doped ito thin film

A silver-doped, thin-film technology, applied in the field of preparation of silver-doped ITO thin films, can solve the problems of difficult control of doping amount, high resistivity, complicated operation, etc., and achieve easy control of doping amount, low resistivity, and easy preparation The effect of simple method

Active Publication Date: 2016-11-23
徐东
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the embodiment of the present invention is to provide a method for preparing a silver-doped ITO thin film, which aims to solve the problems of complicated operation, difficult control of doping amount and high resistivity in the prior art

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  • A kind of preparation method of silver-doped ito thin film
  • A kind of preparation method of silver-doped ito thin film
  • A kind of preparation method of silver-doped ito thin film

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[0014] The embodiment of the present invention provides a method for preparing a silver-doped ITO thin film. For the preparation method, please refer to figure 1 shown. The preparation method of this silver-doped ITO film comprises the following steps:

[0015] S01. Prepare precursor solution: dissolve indium salt and tin salt, prepare an organic solution of a mixture of indium salt and tin salt, add a stabilizer and mix to obtain a precursor solution;

[0016] S02. Prepare silver-doped ITO sol: mix the organic solution containing silver ions with the precursor solution prepared in step S01, and obtain a silver-doped ITO sol after aging treatment, wherein the silver-doped ITO sol The silver ion concentration is 0.01~0.1mol / L;

[0017] S03. Annealing treatment to prepare silver-doped ITO film: apply the silver-doped ITO sol prepared in step S02 to the substrate for at least one post-coating drying treatment, and then perform annealing treatment to obtain Ag:ITO film.

[0018...

Embodiment 1

[0032] Weigh respectively indium trichloride and tin chloride tetrahydrate with a purity greater than 99.99% and an atomic percent content ratio of 5%: 95%, and dissolve them in absolute ethanol respectively, and then mix the two solutions at room temperature, And add a small amount of monoethanolamine as a stabilizer and then magnetically stir evenly to obtain In 3+ and Sn 4+ The total concentration is 0.15mol / L precursor solution.

[0033] An appropriate amount of indium nitrate was dissolved in anhydrous methanol, and a small amount of acetonitrile was added to stir magnetically at room temperature for 1 h to obtain a uniform solution containing silver ions.

[0034] The precursor solution and the solution containing silver ions were mixed, stirred magnetically for 1 h at room temperature, and then aged for 1 day to obtain a silver-doped ITO sol, wherein the concentration of silver ions was 0.05 mol / L.

[0035] Choose a suitable method to coat the quartz substrate, then...

Embodiment 2

[0038] Weigh the indium acetylacetonate and stannous chloride dihydrate with a purity greater than 99.99% and an atomic percent content ratio of 8%:92%, respectively, and dissolve them in ethylene glycol methyl ether, and then dissolve the two solutions at room temperature Mix, and add a small amount of diethanolamine as a stabilizer and then magnetically stir evenly to obtain In 3+ and Sn 4+ A precursor solution with a total concentration of 0.2mol / L.

[0039] An appropriate amount of indium nitrate was dissolved in anhydrous methanol, and a small amount of acetonitrile was added to magnetically stir at room temperature for 1.5 h to obtain a uniform solution containing silver ions.

[0040] The precursor solution and the solution containing silver ions were mixed, stirred magnetically for 2 hours at room temperature, and then aged for 2 days to obtain a silver-doped ITO sol, wherein the concentration of silver ions was 0.05 mol / L.

[0041] The prepared silver-doped ITO sol ...

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Abstract

The invention is suitable for the field of photoelectric materials and provides a method for manufacturing an ITO thin film fixed with silver. According to the method, the sol-gel technology is utilized to manufacture the ITO thin film mixed with the silver. The method particularly comprises the following steps that a precursor solution is manufactured; ITO sol mixed with the silver is manufactured; the ITO thin film mixed with the silver is manufactured. The ITO thin film manufactured with the method is smooth in surface and compact in particles, the average transmittance reaches up to 85 percent, and resistivity reaches 10-4 grades.

Description

technical field [0001] The invention belongs to the field of photoelectric materials, in particular to a method for preparing a silver-doped ITO thin film. Background technique [0002] Tin-doped indium oxide (IndiumTinOxide), referred to as ITO, is an n-type semiconductor material that has the advantages of high electrical conductivity, high visible light transmittance, high mechanical hardness and excellent chemical stability. It is mainly used in the field of optoelectronic devices, especially Flat panel displays, thin film solar cells and other fields are the most commonly used thin film materials for transparent electrodes of liquid crystal displays, plasma displays, electroluminescent displays, touch screens, solar cells and other electronic instruments. [0003] The main performance indicators of ITO thin films in product applications are reflected in transmittance and resistivity. In order to improve the optical and electrical properties of ITO thin films and meet t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00
Inventor 徐东徐永清石佳光
Owner 徐东