Graphene crystal orientation rapid detection method based on atomic power microscopy
A technology of atomic force microscopy and detection methods, applied in scanning probe microscopy, measuring devices, scanning probe technology, etc., can solve the problems of lack of cutting and tailoring, and the inability to realize geometric configuration tailoring, etc.
Active Publication Date: 2013-10-30
SHENYANG INST OF AUTOMATION - CHINESE ACAD OF SCI
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[0004] Although the existing graphene cutting and tailoring technologies can build nanostructures on graphene, they are all "blind processing", which is the cutting and tailoring without the guidance of the graphene lattice direction.
It is impossible to tailor the geometric configuration with a specific edge structure, and studies have shown that graphene will exhibit different electrical properties (metallic or semiconductive) depending on the edge structure
But so far there are no reports of this
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[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0030] figure 1 It is the implementation flowchart of the present invention. The concrete steps of an embodiment of the present invention are:
[0031] 1), using AFM friction scanning mode, in figure 2 Obtain a friction scan line on the graphene sample shown in (a) for height analysis (eg figure 2 (b) shown). In this embodiment, it can be seen that the height difference indicated by the dotted line is 2.647 nm, which is the thickness of graphene. This shows that the sample is graphene rather than graphite (when the thickness exceeds 3.34nm, it is graphite). The friction signal is the collected horizontal torsion signal of the cantilever beam. get as image 3 The data of , where the abscissa is the scan line length, and the ordinate is the friction force.
[0032] 2) Before performing the wavelet transform, it is necessary to perform ...
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The invention relates to a graphene crystal orientation detection technique, in particular to a graphene crystal orientation rapid detection method based on the atomic power microscopy. The graphene crystal orientation rapid detection method based on the atomic power microscopy is mainly applied to the field of processing and manufacturing of graphene. According to the graphene crystal orientation rapid detection method based on the atomic power microscopy, the AFM friction scanning imaging technique is adopted, a scanning friction force curve is obtained at any position of a graphene material, the power spectrum distribution information of a graphene atom contained in the friction force scanning curve can be extracted from scanning data by means of wavelet transform and fast Fourier transform, and then different crystal orientations of the graphene are judged. The graphene crystal orientation rapid detection method based on the atomic power microscopy has the advantages of being capable of judging the crystal orientations of the graphene fast, conveniently and accurately in the indoor temperature environment, and high in practicability significance.
Description
technical field [0001] The invention relates to a graphene crystal orientation detection technology, in particular to a graphene crystal orientation rapid detection method based on atomic force microscopy, which is mainly used in the field of graphene processing and manufacturing. Background technique [0002] Graphene has excellent electrical, physical and mechanical properties, and has shown extraordinary performance in nano-devices, such as high-speed self-cooling FETs, high-sensitivity sensors, supercapacitors, etc. Recently, IBM has successfully developed the fastest-running radio-frequency graphene transistor to date, with a cut-off frequency as high as 155GHz, far exceeding the current state-of-the-art silicon transistor (40GHz) with the same gate length. Graphene is widely regarded as an ideal material for next-generation chip manufacturing. [0003] However, intrinsic graphene has no energy gap, so graphene-based transistors cannot be completely turned off, and can...
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IPC IPC(8): G01Q60/24
Inventor 刘连庆张嵛席宁王越超董再励
Owner SHENYANG INST OF AUTOMATION - CHINESE ACAD OF SCI