Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Technology for planting straw mushroom by taking sisal hemp slag as raw material

A technology of sisal dregs and straw mushrooms, which is applied in the field of planting straw mushrooms using sisal dregs as raw materials, can solve the problems of high pesticide residues, poisonous pesticides, adverse effects, etc. Effect of growth cycle and cost reduction of raw materials

Inactive Publication Date: 2013-11-13
黄香利
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because cotton is not food, the pesticides used in the cotton cultivation process are more poisonous and more, so the pesticide residues in waste cotton are relatively high; at the same time, waste cotton contains a certain amount of cottonseed, and cottonseed contains a small amount of free gossypol, gossypol Poisonous to the human body, it may have adverse effects on the human body in large quantities, and the food safety of straw mushroom products cannot be guaranteed
Moreover, the growth cycle of straw mushrooms takes about 10 days, and it is difficult to meet the needs of consumers when the demand for straw mushrooms is large.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Technology for planting straw mushroom by taking sisal hemp slag as raw material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0025] Step 1. Fully mix 88% sisal slag, 9% dry cow dung, 1.2% gypsum, and 1.8% superphosphate according to the mass ratio to prepare compost. The moisture content of the compost is controlled at 72%, and the relative air humidity is controlled at 93%. %;

[0026] Step 2: The compost is stacked and fermented for 4 days, and the compost is turned over every 10 hours. The fermented compost is placed on the mushroom bed, and the surface is covered with a plastic film, and the secondary fermentation is carried out at a high temperature of 70°C for 7 hours;

[0027] Step 3: After the secondary fermentation is completed, open the plastic film, and after the temperature of the compost drops to 34°C, the temperature of the compost is reduced to 0.5kg / m 2 Spread the bacteria evenly on the surface of the compost;

[0028] Step 4: Place the culture material after inoculation in a sterilized mushroom house for cultivation. The germination temperature of the basidiospores is controlled at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of edible mushroom cultivation, in particular to a technology for planting straw mushroom by taking sisal hemp slag as a raw material. The technology comprises the steps of preparing compost by taking the sisal hemp slag as the raw material; carrying out inoculation on the compost by stacking and fermenting the compost; placing the inoculated compost in a sterilized mushroom room for cultivating, and controlling different growth temperatures, different pH (Potential of Hydrogen) and different water contents in a basidiospore budding stage, a mycelial growth stage and a sporocarp development stage; and picking the straw mushroom, sending the straw mushroom to a processing workshop to be classified and packaged, and putting the straw mushroom in a refrigerating room for preserving. According to the technology disclosed by the invention, the cost of the raw material is lowered, the food safety is ensured, and the growth cycle of the straw mushroom is shortened.

Description

technical field [0001] The invention relates to the technical field of edible fungus cultivation, in particular to a process for planting straw mushrooms using sisal residues as raw materials. Background technique [0002] Straw mushroom is one of the most common edible fungi cultivated in my country. It has rich nutrition, delicious taste, nourishing spleen and Qi, improving immunity, lowering cholesterol, anti-cancer and other health effects, and is deeply loved by consumers. At present, the compost for straw mushroom production is mainly waste cotton. In the traditional production mode, the raw materials must be soaked and trampled, and stacked for retting. Because cotton is not food, the pesticides used in the cotton cultivation process are more toxic and more, so the pesticide residues in waste cotton are relatively high; at the same time, waste cotton contains a certain amount of cottonseed, and cottonseed contains a small amount of free gossypol, gossypol It is poiso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): A01G1/04
Inventor 黄香利
Owner 黄香利
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com