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Method for producing copper indium tellurium film

A copper indium tellurium and thin film technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of complex process routes and high production costs, and achieve low requirements for equipment, low production costs, and good continuity The effect of sex and uniformity

Inactive Publication Date: 2013-11-13
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the low cost of raw materials, it is a very promising photoelectric thin film material, but the existing process route is complicated and the preparation cost is high, so it is necessary to explore a low-cost preparation process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0030] b. Add 1.0 part of CuCl 2 2H 2 O, 1.72 parts of InCl 3 4H 2 O and 1.87 parts TeO 2 Put it into a glass bottle, add 39.789 parts of deionized water and 26.526 parts of ammonia water, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0031]c. Drop the above solution onto the glass substrate placed on the homogenizer, then start the homogenizer, rotate the homogenizer at 200 rpm for 5 seconds, and rotate at 3000 rpm for 15 seconds to make the dripped solution spin After coating evenly, the substrate was dried at 100°C, and the above steps were repeated 10 times, so that a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0032] d. Put the precursor thin film sample obtained by the above process into a sealable container, and put 1.449 parts of hydrazine hydrat...

Embodiment 2

[0035] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0036] b. Add 1.0 part of CuCl 2 2H 2 O, 1.72 parts of InCl 3 4H 2 O and 1.87 parts TeO 2 Put it into 39.789 parts of ethylene glycol and mix evenly, add hydrochloric acid until the pH is 2.5, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0037] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds and at 3000 rpm for 15 seconds, so that the dripped solution is coated After uniformity, the substrate was dried at 100° C., and the above steps were repeated 10 times, so that a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0038] d. Put the precursor thin film sample obtained by the above process into a sealable container, and put 1.791 parts of hydrazine ...

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Abstract

The invention provides a method for producing copper indium tellurium film materials and belongs to the technical field of production of photoelectric films. A copper indium tellurium film is obtained through the following steps of cleaning a glass substrate; placing copper chloride-water (1 / 2), indium chloride-water (1 / 4) and tellurium dioxide into solvent and adjusting a pH (Potential Of Hydrogen) value; obtaining a precursor film on the glass substrate by a spin-coating method; drying the precursor film and placing the precursor film into a closed container with hydrazine hydrate to enable the precursor film sample not to be in contact with the hydrazine hydrate; taking out the precursor film sample to dry after the closed container containing the precursor film sample is heated to obtain the copper indium tellurium photoelectric film. According to the method for producing the copper indium tellurium film, the high temperature and high vacuum conditions are not required, the requirement for an instrument is low, the production cost is low, the production efficiency is high, and the operation is easy; the obtained copper indium tellurium photoelectric film is good in continuity and uniformity; the copper indium tellurium photoelectric film which is high in performance can be produced with the production method as a new process and the production method is low in cost and can achieve industrialization.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thin film preparation, and in particular relates to a preparation method for preparing a copper indium tellurium thin film. Background technique [0002] As we all know, the rapid economic development will inevitably bring about a sharp increase in energy consumption. With the rapid development of my country's society and economy in recent years, energy shortage and pollution caused by energy consumption have become prominent problems in the development of domestic society. Therefore, the development and utilization of clean energy is important for environmental protection, sustainable economic development and building a harmonious society. meaning. In order to make full use of solar energy, which is a clean, safe and environmentally friendly renewable resource, the research and application of photoelectric materials have been paid more and more attention in recent years. [0003] Copper in...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘科高张力李静石磊许斌
Owner SHANDONG JIANZHU UNIV
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