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A gate-controlled semiconductor device with a new gate structure

A gate structure and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of affecting the frequency characteristics of devices, reducing transconductance, increasing the distance from gate to channel with insulating gate dielectric, etc., to increase gate control ability, The effect of increasing the breakdown voltage and operating frequency and reducing the gate leakage current

Active Publication Date: 2016-02-03
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the insulating gate dielectric increases the distance from the gate to the channel, and the transconductance will decrease, thus affecting the frequency characteristics of the device

Method used

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  • A gate-controlled semiconductor device with a new gate structure
  • A gate-controlled semiconductor device with a new gate structure
  • A gate-controlled semiconductor device with a new gate structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as Figure 3 to Figure 5 As shown, a III-nitride HEMT with a new gate structure includes substrate 1, buffer layer 2, channel layer 3 and barrier layer 4 from bottom to top, buffer layer 2, channel layer 3 and barrier layer Layer 4 is equivalent to the middle layer, and the source electrode 5 and the drain electrode 6 are made on the barrier layer 4, and a gate structure is arranged between the source electrode 5 and the drain electrode 6, and the gate structure is composed of dielectric gates and dielectric gates alternately connected along the gate width direction. The Schottky grid is composed of a dielectric grid metal 8 and a gate dielectric 7 arranged up and down. In this embodiment, there are 4 dielectric gates and 3 Schottky gates, and the two ends of the gate structure are dielectric gates.

[0025] The substrate 1 is Si or sapphire or SiC or GaN or diamond.

[0026] The buffer layer 2 is AlN or GaN or AlN and Al x Ga 1-x N (0x Al 1-x N (0

[0...

Embodiment 2

[0035] Depend on Figure 6 It can be seen that, different from Embodiment 1, this embodiment is a delta-doped gate-controlled semiconductor device with a novel gate structure, the middle layer is an N-type or P-type delta-doped semiconductor 10, and the two ends of the gate structure One end is a dielectric grid, and the other end is a Schottky grid.

[0036] In this embodiment, the widths of the dielectric gates are equal, and the widths of the Schottky gates are equal, but the widths of the two are not equal.

[0037] In this embodiment, the dielectric grid and the Schottky grid are planar grids.

Embodiment 3

[0039] Depend on Figure 7 It can be seen that, different from Embodiment 1, the dielectric grid in this embodiment is a grooved grid, and the Schottky grid is a planar grid. Of course, the Schottky gate can also be a grooved gate, that is, both the dielectric gate and the Schottky gate are grooved gates. The groove depths of the dielectric grids or Schottky grids may be equal or unequal.

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Abstract

The invention discloses a grid-control semiconductor device with a novel grid structure, belonging to a semiconductor high-frequency power device and a high-voltage device. The grid structure is formed by alternately connecting dielectric grids and Schottky grids along the width direction of the grid. Compared with a conventional grid structure, the grid-control semiconductor structure is characterized in that a novel grid structure with the schottky grids and the dielectric grids alternately appearing along the width direction of the grid is adopted; the leaked current is reduced by utilizing the dielectric grid, the grid-control capacity is improved by utilizing the schottky grid, and the contradictory relation between the breakthrough voltage and the frequency property of the semiconductor device can be alleviated; and meanwhile, compared with the conventional dielectric grid process, only a photolithography mask for etching the grid dielectric needs to be changed, and no process step and cost are increased.

Description

technical field [0001] The invention relates to semiconductor high-frequency power devices and high-voltage devices, in particular to the high-frequency power field of gate-controlled semiconductor devices. Background technique [0002] The Schottky gate has strong gate control ability and good device frequency characteristics, but its gate leakage and breakdown characteristics are poor, so it is widely used in the microwave field; the dielectric gate has small gate leakage and good breakdown characteristics, but its Poor gate control capability and poor frequency characteristics are widely used in high voltage fields. [0003] The Schottky gate directly controls the channel through the barrier layer, which has a strong control ability on the channel and a large transconductance, so that the frequency characteristic is good. The structure of the Schottky gate III nitride high electron mobility transistor (HEMT) is as follows: figure 1 shown. From the literature: M.A.Khan, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/778
Inventor 王元刚冯志红敦少博吕元杰房玉龙顾国栋宋旭波
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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