Thermoelectric material Mg2Sn and preparation method thereof

A technology of thermoelectric materials and bulk materials, applied in the field of thermoelectric materials Mg2Sn and its preparation, can solve problems such as easy oxidation, easy volatilization, and harsh temperature conditions

Active Publication Date: 2013-11-27
TAIYUAN UNIV OF TECH
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the melting point of Mg is 957.9K and the melting point of Sn is 504.89K, there is a large difference between the melting points of the two, and the preparation of Mg 2 The temperature conditions of Sn are relatively harsh, and the product composition is difficult to control
In addition, Mg simple substance is easy to volatilize and be oxidized under high temperature conditions, and the formed product will be mixed with a large amount of magnesia MgO impurities, which seriously affects the formation of Mg. 2 Properties of Sn

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermoelectric material Mg2Sn and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0014] The present invention adopts MgH 2 Synthesis of thermoelectric material Mg by reaction method 2 Sn powder, combined with electric field activated pressure-assisted synthesis of FAPAS to achieve Mg 2 Rapid densification of Sn-based bulk materials for thermoelectric materials Mg 2 Sn, the corresponding reaction formula is: MgH 2 +S n →Mg 2 S n +H 2 ↑The material preparation method specifically includes the following steps:

[0015] Step 1: powdered magnesium hydride MgH 2 , tin Sn and yttrium Y are mixed according to the molar ratio of 1.9:1:0.1. Specifically, in an argon (Ar gas) protected glove box, the MgH 2 Powder, Sn powder, and Y powder are mixed according to the molar percentage of 1.9:1:0.1 to obtain a preliminary mixture;

[0016] MgH 2 And Sn as a reactive substance, Y as a dopant, doping Y can improve the electrical properties of thermoelectric materials;

[0017] Step 2: Stir the mixture so that the components are evenly mixed. Specifically, seal t...

Embodiment approach 2

[0024] see figure 1 , the Mg provided by the embodiment of the present invention 2 The preparation method of Sn, powdery magnesium hydride MgH 2 , tin Sn and yttrium Y were mixed according to the molar ratio of 1.9:1:0.1, put into a sealed polytetrafluoroethylene ball mill jar, and ball milled in a high-speed vibrating ball mill for 30 minutes (min) to obtain MgH 2 , Sn and Y are uniformly stirred powdery mixture; the uniformly stirred powdery mixture is placed in a ceramic tube and sealed, and the sealed powdery mixture is put into a tube furnace for reaction at 673K ​​(400°C), Obtain the powdery thermoelectric material magnesium tin oxide Mg 2 Sn, others are the same as embodiment 1.

Embodiment approach 3

[0026] Mg 2 The graphite mold of Sn is placed in the FAPAS furnace activated by the electric field for sintering, and the bulk Mg with the shape corresponding to the graphite mold is obtained 2 Sn, the powdered Mg 2 The graphite mold of Sn is placed in a vacuum FAPAS furnace with a vacuum degree not greater than 15Pa, the current speed of the FAPAS furnace is set to 800-1000A, and the powdered Mg 2 Sn is heated to 800K to make it sintered, and others are the same as embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a thermoelectric material Mg2Sn and a preparation method thereof, belonging to the technical field of inorganic materials. The invention is characterized in a high-thermoelectric-property thermoelectric material prepared at low temperature and a preparation method thereof. The method comprises the following steps: mixing powdery MgH2, Sn and Y in a mol ratio of 1.9:1:0.1, putting in a sealed teflon ball milling tank, and carrying out ball milling in a high-speed vibrating ball mill for 20-40 minutes to obtain a powdery MgH2-Sn-Y uniform mixture; and sealing the powdery uniform mixture in a ceramic pipe, putting the sealed powdery mixture in a pipe furnace, and reacting at 573-673 K to obtain the powdery thermoelectric material Mg2Sn.

Description

technical field [0001] A kind of thermoelectric material Mg of the present invention 2 Sn and its preparation method belong to the technical field of inorganic materials, in particular to a method using MgH 2 Synthesis of thermoelectric material Mg by reaction method 2 Sn powder, combined with electric field activated pressure-assisted synthesis of FAPAS to achieve Mg 2 Rapid densification of Sn-based bulk materials for thermoelectric materials Mg 2 Sn and its preparation method. Background technique [0002] Thermoelectric material is a kind of material that can realize mutual conversion of heat energy and electric energy. It has the advantages of no noise, no pollution, easy maintenance, safety and reliability, etc. It has important application value and broad application prospects in the fields of thermoelectric power generation and thermoelectric refrigeration. [0003] The commonly used formula for thermoelectric properties of thermoelectric materials is ZT=(S 2 σ / ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C22C13/00C22C1/05
Inventor 樊文浩
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products