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Storage materials and application storage materials in nonvolatile charge trapping type memory device

A charge-trapping, non-volatile technology, applied in the field of microelectronic materials, can solve problems such as leakage current, difficulty in meeting the miniaturization requirements of memory, and charge loss of polysilicon floating gates, and achieve the effect of storing large amounts of information

Inactive Publication Date: 2013-12-04
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the gradual reduction of the feature size of semiconductor devices and the continuous improvement of integration, floating gate non-volatile memory devices face serious leakage current problems, and it is difficult to meet the miniaturization requirements of memory
As the size of the tunneling layer continues to decrease in floating-gate memory devices, a single defect can lead to the loss of all charge stored in the polysilicon floating gate

Method used

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  • Storage materials and application storage materials in nonvolatile charge trapping type memory device
  • Storage materials and application storage materials in nonvolatile charge trapping type memory device
  • Storage materials and application storage materials in nonvolatile charge trapping type memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] a) Select P-type Si as the substrate, and use ALD (vacuum atomic layer deposition or vacuum coating) technology to grow Al on the surface with a thickness of about 2-10nm after cleaning. 2 o 3 as a tunneling layer;

[0025] b) Growth of (CuO) with uniform composition on the tunneling layer by magnetron sputtering X (Al 2 o 3 ) 1-x Thin film as storage layer;

[0026] c) Re-grow a layer of Al with a thickness of about 15nm on the storage layer by ALD 2 o 3 as a barrier;

[0027] d) Annealing the above-prepared sample at a temperature lower than the melting point of CuO causes CuO nanocrystals to precipitate from the storage layer and be covered by Al 2 o 3 Surrounded by an amorphous parent phase, the CuO nanocrystals are used as a storage medium; the annealing is carried out in a rapid annealing furnace, the annealing time is 20-60S, the annealing atmosphere is a nitrogen atmosphere, and the annealing temperature is 200±15°C; e) re-annealing after annealing Pla...

Embodiment 2

[0028] Embodiment 2: Based on the Si substrate, the preparation process of the CuO nano-microcrystal-based non-volatile charge-trapping memory device is specifically as follows:

[0029] a) Put the Si substrate into an appropriate amount of acetone, ultrasonically clean it for 10 minutes, then ultrasonically clean it with deionized water for 10 minutes to clean off the remaining substances on the surface of the substrate, and then put the substrate into the diluted hydrofluoric acid solution Immerse in the medium for about 30 seconds to remove surface oxides, then use deionized water to ultrasonically clean for 5 minutes to wash off the residual hydrofluoric acid, blow dry with high-purity nitrogen, and then put it into the atomic layer chemical vapor deposition chamber to deposit a film.

[0030] b) Al(CH 3 ) 3 As a metal source, ozone is a source of oxygen. Deposit Al with a thickness of 3nm 2 o3 as a tunneling layer.

[0031] c) Then put the sample into the magnetron sp...

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Abstract

Provided are charge storage materials in a nonvolatile charge trapping type memory device. The storage materials are mixed oxide materials, namely, (CuO) x (Al2O3) 1-x mixed oxide materials, and the value of x is 0.1-0.8. The invention further discloses the application of the charge storage materials in the nonvolatile charge trapping type memory device. According to the structure of the nonvolatile charge trapping type memory device, a tunneling layer Al2O3 / a storage layer film (CuO) X (Al2O3) 1-x / a barrier layer Al203 is grown on a semiconductor substrate in sequence, (CuO) x (Al2O3) 1-x is a storage layer, and CuO nanocrystalline obtained from the charge storage materials (CuO) X (Al2O3) 1-x through annealing has the function of storing dielectric materials.

Description

technical field [0001] The invention belongs to the field of microelectronic materials, and relates to a new type of storage material and its application in nonvolatile charge trapping storage devices. Background technique [0002] Since the birth of non-volatile semiconductor memory, floating gate memory has been a mainstream product in the memory market. With the gradual reduction of the feature size of semiconductor devices and the continuous improvement of integration, floating gate non-volatile memory devices face serious leakage current problems, and it is difficult to meet the miniaturization requirements of memory. With the continuous reduction of the size of the tunneling layer in the floating gate type memory device, one defect will lead to the loss of all charges stored in the polysilicon floating gate. Therefore, finding a non-volatile memory with high storage density, fast programming, low cost, and low energy consumption has become a hot spot in the field of m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/51H01L27/115H10B43/30
Inventor 卢伟徐波夏奕东殷江刘治国
Owner NANJING UNIV
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