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Deposition method of SiC-Al thin-film material with Al transition layer and low-frictional coefficient

A low-friction coefficient and thin-film material technology, which is applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of low bonding strength and large friction coefficient, and achieve low bonding interface strength and low friction coefficient, the effect of improving the interface strength

Active Publication Date: 2013-12-11
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is: in order to give full play to the advantages of SiC materials such as excellent corrosion resistance, wear resistance and high mechanical hardness, overcome the relatively large friction coefficient of SiC as a solid lubricating film material, and the friction with metal substrates. The defect of low interface bonding strength; the present invention provides a deposition method of a low friction coefficient SiC-Al thin film material with an Al transition layer having a low friction coefficient and a high bonding strength with a metal substrate, namely providing a Deposition Method of Low Friction Coefficient SiC-Al Thin Film Material with Al Transition Layer

Method used

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  • Deposition method of SiC-Al thin-film material with Al transition layer and low-frictional coefficient

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Embodiment 1

[0047] The present invention has the deposition method of the low friction coefficient SiC-Al film material of Al transition layer, and the detailed steps of this deposition method are as follows:

[0048] A. First adjust the distance between the SiC target and the Al target in the PVD physical vapor deposition equipment and the substrate, the distance between the SiC target and the substrate is 80mm, and the distance between the Al target and the substrate is 380mm; then Place a metal substrate with a diameter of Φ50mm on the stage, and use a vacuum device connected to the deposition equipment (the vacuum device used has a two-stage vacuum system with a molecular pump as the main pump and a rotary vane vacuum pump as the secondary pump) , the vacuum pressure in the deposition chamber was pumped to 5×10 -4 Pa;

[0049] B. Place the baffles of the SiC target and the Al target between the target and the substrate respectively, open the Ar gas valve, introduce the Ar gas into th...

Embodiment 2

[0054] Embodiment 2: basically the same as Embodiment 1, the difference is:

[0055] In step D: adjust the input power of the Al target to 5w.

[0056] The obtained product SiC-Al thin film material thickness is 1 μm, and contains the SiC-0.88%Al thin film of 0.88%Al atom, and the intermediate transition layer thickness of this thin film is 0.3 μm; figure 1 and 2 , the coefficient of friction between it and the SiC ball is 0.1.

Embodiment 3

[0057] Embodiment 3: basically the same as Embodiment 1, the difference is:

[0058] In step D: adjust the input power of the Al target to 6w.

[0059] The obtained product SiC-Al thin film material thickness is 1mm, and contains the SiC-0.97%Al thin film of 0.97%Al atom, and the intermediate transition layer thickness of this thin film is 0.3 μ m; figure 1 and 2 , the coefficient of friction between it and the SiC ball is 0.08.

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Abstract

The invention discloses a deposition method of a SiC-Al thin-film material with an Al transition layer and a low-frictional coefficient. The deposition method comprises the following steps of: adjusting the distances between an SiC target and an Al target in deposition equipment and a base material, placing the base material on an objective table, and vacuumizing the interior of a deposition chamber; placing baffles of the SiC target and the Al target between the targets and the base material, and introducing Ar gas into the deposition chamber; respectively cleaning the surfaces of the SiC target and the Al target by using radio-frequency power supplies; closing the power supply of the SiC target, and simultaneously taking away the baffle of the Al target, so that the Al target deposits the transition layer on the base layer; then opening the power supply of the SiC target, and simultaneously taking away the baffle plate of the SiC target, so that the SiC target and the Al target simultaneously conduct sputter deposition on the base material; after ending deposition, obtaining the SiC-Al thin-film material with the Al transition layer. The low-frictional coefficient SiC-Al thin-film material which has relatively high interface bonding strength with the metal base material can be prepared by the deposition method.

Description

technical field [0001] The invention relates to a preparation method of a SiC thin film material, in particular to a deposition method of a low friction coefficient SiC-Al thin film material with an Al transition layer. Background technique [0002] SiC material has excellent corrosion resistance, heat resistance, wear resistance and high mechanical strength, its hardness (H v : 3300) second only to diamond and C-BN materials, the SiC material synthesized at a high temperature of 1300-1800 °C can still maintain 93% of the hardness at 700 °C and is not oxidized. It can be used in micro-sensors, micro-nano machinery (MEM and NEMS) used in harsh environments, and as a protective coating to improve wear resistance and corrosion resistance. However, as a solid lubricating film material, it is not only required to maintain the excellent characteristics of SiC materials, but also must have a low coefficient of friction and high interface bonding strength with the metal substrate. ...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/02
Inventor 郑锦华
Owner ZHENGZHOU UNIV