Solar battery integrating bypass diode and preparation method of solar battery
A technology integrating bypass and solar cells, applied in diodes, circuits, photovoltaic power generation, etc., can solve the problems of complex chip technology, damage to batteries, component failure, etc., and achieve the effect of saving chip area, simplifying process steps, and convenient packaging
Active Publication Date: 2013-12-11
TIANJIN SANAN OPTOELECTRONICS
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Problems solved by technology
Each individual cell in the assembly will be forward biased, but this involves an unavoidable problem: when any of the cells is damaged or shaded from light, the shaded cell will be forced to withstand the The reverse bias and current generated by other batteries in the battery may eventually permanently damage the battery or even cause component failure
In order to improve chip integration and optimize packaging efficiency, people have designed many ways to integrate bypass diodes in the solar cell chip manufacturing process, but some of these solutions need to sacrifice chip area, and some are not suitable for multi-junction solar cells with full back electrodes. And some chips are more complex
Method used
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[0035] The following embodiment discloses a solar cell with integrated bypass diodes, such as figure 1 As shown, it includes: a P-type single crystal Si substrate 004, which has at least one first via hole penetrating the substrate; an N-type diffusion layer 007, formed on the sidewall of the first via hole and extending toward the The back side of the P-type substrate extends; a multi-layer metal structure fills the first via hole, wherein the Schottky contact layer metal 006 is directly in contact with the N-type diffusion layer 007, and constitutes a Schottky bypass diode, high The conductivity metal 005 is formed on the surface of the Schottky contact layer metal 006 to form an ohmic contact with it; the epitaxial layer 003 of the multi-junction solar cell structure is formed on the P-type single crystal Si substrate 004 and has a structure penetrating through the multi-junction solar cell structure. The second via hole of the junction solar cell structure epitaxial layer ...
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The invention discloses a solar battery integrating a bypass diode and a preparation method of the solar battery. The solar battery is characterized in that a doped type of a substrate is a P type, and the substrate is formed with a photoelectric conversion part. The substrate is formed with at least one through hole which penetrates through the substrate. An N-typed diffusion layer is formed on the side wall of the through hole and the reverse surface of the substrate. The through hole is filled with metal so that a Schottky bypass diode is formed on the side wall of the through hole. A positive electrode on the photoelectric conversion part is connected with the reverse surface of the substrate through the filled metal in the through hole. In the process of preparing an all-back electrode chip, the bypass diode is integrated. Preparation of the chip is simple in packaging so that large-scale application of the solar battery is facilitated.
Description
technical field [0001] The invention relates to a solar cell integrating bypass diodes and a preparation method thereof, belonging to the technical field of semiconductor devices and processes. Background technique [0002] At present, most solar cells on the market are silicon solar cells. As the first generation of solar cells, their cost is low, their manufacture is simple, and they have been rapidly developed and widely used. However, silicon solar cells have some insurmountable shortcomings, such as high-purity silicon The preparation process will lead to serious environmental pollution problems, the efficiency of silicon cells has reached the theoretical bottleneck and it is difficult to continue to improve, the overall efficiency is low, and silicon cells are not suitable for light concentration, so there is little room for cost reduction. In recent years, multi-junction compound solar cells as the third-generation photovoltaic power generation technology have begun t...
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Patent Timeline
Login to View More IPC IPC(8): H01L31/0224H01L29/872H01L31/0687H01L27/142H01L31/18H01L21/329
CPCH01L31/0443H01L31/0687H01L31/0693H01L31/108Y02E10/544Y02P70/50
Inventor 刘冠洲林桂江毕京锋熊伟平安晖吴志敏宋明辉
Owner TIANJIN SANAN OPTOELECTRONICS