Ternary system electric storage material and preparation and application thereof

Abstract

The invention discloses a ternary system electric storage material and preparation and application of the ternary system electric storage material. The chemical structure general formula of the ternary system electric storage material is , wherein x ranges from 5 to 9, y ranges from 1 to 5, the number-average molecular weight ranges from 11000 to 13000, the molecular weight distribution ranges from 1.4 to 1.6, and R is -Br or -H or -NO2 or -N(CH2CH3)2. The ternary system electric storage material has the high performance of having the ultrahigh electrical information storage intensity, and the information storage capacity of the material is greatly improved. Meanwhile, a ternary system storage device can be obtained based on the ternary system electric storage material, the preparation method is simple and high in efficiency, the obtained ternary system data storage device is high in stability, the data memory space in a unit intensity increases exponentially in comparison with the data memory space based on '0' and '1' binary data storage, and therefore the ternary system electric storage material has great value in ultrahigh density data storage application of the next generation.

Description

technical field

[0001] The present invention relates to an electrical storage material, in particular to a ternary electrical storage material and a preparation method thereof, and also to a ternary data storage device prepared using the ternary electrical storage material, and its Preparation. Background technique

[0002] In the past few decades, the storage capacity of inorganic semiconductor memory devices has increased significantly, and the size has also shrunk dramatically. However, in the above-mentioned developments and changes, there are also some problems that need to be solved urgently, such as the limitation of the resolution of the physical lithography technology and the high production cost. These challenges seriously threaten the development of current inorganic semiconductor memory materials. Therefore, research on alternative materials is very meaningful.

[0003] At present, storage devices based on organic semiconductor materials, especially polymer ma...

Examples

Embodiment 1

[0046] Add 14.0 g of potassium hydroxide powder, 6.68 g (40 mmol) of carbazole powder, and 80 mL of dimethylformamide solution into a 250 mL round bottom flask, and mix and stir at room temperature for 45 min. Then slowly add 3.5mL (52mmol) of 2-chloroethanol dropwise, and continue to stir for 10h, and finally pour the obtained mixture into water to obtain a white emulsion, which is left to stand for 6h until precipitation occurs, and then filtered. Then the obtained solid was dissolved in 70% ethanol and filtered again with a G4 sand core funnel to remove insoluble matter, and water was added to the filtrate to obtain a white needle-like solid. After filtration, vacuum drying was performed to obtain 9-ethanol carbazole.

[0047] The information of the proton nuclear magnetic resonance spectrum of the above-mentioned 9-ethanol carbazole made is as follows: 1 H NMR (DMSO-d6, 400MHz,), δ (ppm): 3.77-3.79 (m, 2H), 4.45 (dd, J=4.41, 7.07Hz, 2H), 5.51 (t, J=5.37Hz, 1H) ,7.20(m,2H)...

Embodiment 2

[0062] In this example, the preparation process of the carbazole-containing monomer and the naphthalene anhydride-containing monomer is the same as that of Example 1, and will not be repeated here. The differences are as follows:

[0063] Under nitrogen protection, add 5 mmol of carbazole-containing monomer, 0.18 mmol of RAFT reagent, 0.15 mmol of azobisisobutyronitrile, and 3 ml of cyclohexanone to the test tube for reaction, and react at 75 ° C for 24 hours . After the reaction is over, pour the reaction solution into methanol to precipitate the product, filter and dry, then filter and dry the intermediate product, 0.1 mmol of naphthalene anhydride-containing monomer, 0.01 mmol of azobisisobutyronitrile, and 3mL cyclohexanone were added into a ground test tube, and reacted at 75°C for 24 hours. After the reaction, the reaction solution was poured into 500ml of methanol to precipitate the product, and filtered and dried to obtain the ternary electrical storage material of t...

technical field

[0001] The present invention relates to an electrical storage material, in particular to a ternary electrical storage material and a preparation method thereof, and also to a ternary data storage device prepared using the ternary electrical storage material, and its Preparation. Background technique

[0002] In the past few decades, the storage capacity of inorganic semiconductor memory devices has increased significantly, and the size has also shrunk dramatically. However, in the above-mentioned developments and changes, there are also some problems that need to be solved urgently, such as the limitation of the resolution of the physical lithography technology and the high production cost. These challenges seriously threaten the development of current inorganic semiconductor memory materials. Therefore, research on alternative materials is very meaningful.

[0003] At present, storage devices based on organic semiconductor materials, especially polymer ma...

Examples

Embodiment 1

[0046] Add 14.0 g of potassium hydroxide powder, 6.68 g (40 mmol) of carbazole powder, and 80 mL of dimethylformamide solution into a 250 mL round bottom flask, and mix and stir at room temperature for 45 min. Then slowly add 3.5mL (52mmol) of 2-chloroethanol dropwise, and continue to stir for 10h, and finally pour the obtained mixture into water to obtain a white emulsion, which is left to stand for 6h until precipitation occurs, and then filtered. Then the obtained solid was dissolved in 70% ethanol and filtered again with a G4 sand core funnel to remove insoluble matter, and water was added to the filtrate to obtain a white needle-like solid. After filtration, vacuum drying was performed to obtain 9-ethanol carbazole.

[0047] The information of the proton nuclear magnetic resonance spectrum of the above-mentioned 9-ethanol carbazole made is as follows: 1 H NMR (DMSO-d6, 400MHz,), δ (ppm): 3.77-3.79 (m, 2H), 4.45 (dd, J=4.41, 7.07Hz, 2H), 5.51 (t, J=5.37Hz, 1H) ,7.20(m,2H)...

Embodiment 2

[0062] In this example, the preparation process of the carbazole-containing monomer and the naphthalene anhydride-containing monomer is the same as that of Example 1, and will not be repeated here. The differences are as follows:

[0063] Under nitrogen protection, add 5 mmol of carbazole-containing monomer, 0.18 mmol of RAFT reagent, 0.15 mmol of azobisisobutyronitrile, and 3 ml of cyclohexanone to the test tube for reaction, and react at 75 ° C for 24 hours . After the reaction is over, pour the reaction solution into methanol to precipitate the product, filter and dry, then filter and dry the intermediate product, 0.1 mmol of naphthalene anhydride-containing monomer, 0.01 mmol of azobisisobutyronitrile, and 3mL cyclohexanone were added into a ground test tube, and reacted at 75°C for 24 hours. After the reaction, the reaction solution was poured into 500ml of methanol to precipitate the product, and filtered and dried to obtain the ternary electrical storage material of t...

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