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Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers

A thinning, polishing, electrochemical technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve problems such as damage stress, achieve the effect of stress release, avoid damage, and achieve mirror effect

Active Publication Date: 2014-01-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a method for electrochemical thinning and polishing of InP-based RFIC wafers, to solve the stress problem caused by mechanical damage in the thinning and polishing process, and to achieve the stress of the thinning process. Effective release to achieve the purpose of InP low-stress ultra-thin thickness reduction polishing

Method used

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  • Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers
  • Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers
  • Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers

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[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] Such as figure 1 Shown, the method that the InP base RFIC wafer provided by the present invention is carried out electrochemically thins and polishes, comprises the following steps:

[0035] Step 1: cleaning the InP-based RFIC wafer;

[0036] In this step, the InP-based RFIC wafer is immersed in deionized water for ultrasonic cleaning for 20 minutes, and then taken out with hot N 2 blow dry;

[0037] Step 2: Coating photoresist on the surface of the InP-based RFIC wafer;

[0038] In this step, first spray HMDS on the surface of the InP-based RFIC wafer, bake it in a vacuum oven at 180°C for 10 minutes, then apply S9920 photoresist with a thickness of 3 μm, and then bake it on a hot plate at 100°C for 100 seconds...

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Abstract

The invention discloses a method for electrochemically thinning and polishing InP-based RFIC wafers, which includes the following steps: an InP-based RFIC wafer is cleaned; photoresist is applied on the surface of the InP-based RFIC wafer; electrode pattern photolithography is performed on the InP-based RFIC wafer; metal electrodes are produced on the InP-based RFIC wafer; the InP-based RFIC wafer is cleaned; the InP-based RFIC wafer is rapidly alloyed; photoresist is applied on the surface of the InP-based RFIC wafer; lead pattern photolithography is performed on the InP-based RFIC wafer; lead metal is produced on the InP-based RFIC wafer; the InP-based RFIC wafer is connected with wires; the InP-based RFIC wafer is electrochemically polished; the InP-based RFIC wafer is stripped off, and thereby thinning and polishing are finished. The method effectively prevents injuries caused by mechanical thinning, realizes stress release in the process of thinning and polishing and the mirror effect of the polished surface of a substrate, and provides a new solution for the problem of a thinning and polishing process for ultrathin InP.

Description

technical field [0001] The invention relates to the technical field of InP RFIC preparation, in particular to a method for electrochemically thinning and polishing an InP-based radio frequency integrated circuit (Radio Frequency Integrated Circuit, RFIC) wafer. Background technique [0002] With the continuous application of high technology in the military field, the frequency of radio frequency microwave signals is getting higher and higher, the frequency band is getting wider and wider, and the processing capability of digital chips is getting stronger and stronger. Modern warfare has gradually entered the information age and digital age. The rapid development of electronic devices makes the transmission rate of signals faster and faster. With its excellent frequency characteristics, III-V compounds, their semiconductor devices and related ultra-high-speed digital / digital-analog hybrid circuits are becoming increasingly popular in military communications, radar, guidance, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L21/306
Inventor 汪宁
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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