Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of monolayer SiO2 antireflection film

An anti-reflection film, single-layer technology, applied in the field of preparation of single-layer SiO2 anti-reflection film, to achieve excellent chemical stability, overall appearance, and strong adhesion

Inactive Publication Date: 2014-01-22
湖南汉瑞新材料科技有限公司
View PDF4 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the anti-reflection coating technology of solar collector flat plate and vacuum tube glass has not been fully popularized in China, and improving the heating efficiency of solar collectors is the technical trend of domestic collector development

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of monolayer SiO2 antireflection film
  • Preparation method of monolayer SiO2 antireflection film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Substrate glass pretreatment: Ultrasonic the substrate glass in acetone solution and ethanol solution for 30 minutes respectively;

[0031] (2) SiO 2 Preparation of sol: The sol was synthesized in two steps:

[0032] A) Preparation of acidic dilute SiO by traditional sol-gel method 2 The sol is used as the matrix solution, and the preparation method is as follows: TEOS, ethanol and water are used as precursors, mixed according to the molar ratio of 1:30:4, added hydrochloric acid to adjust the pH to 2, stirred evenly, and aged at room temperature for 1 to 10 days. ;

[0033] B) Disperse the nano-silica powder in the ethanol solution, then add the B solution into the A solution according to the weight ratio of the B solution to the A solution of 1:2, and stir it evenly to become a subsequent coating sol;

[0034] (3) Coating film by sol: use dipping and pulling method to coat the surface of the glass substrate to form a film with a thickness of 120-130nm;

[0035...

Embodiment 2

[0038] (1) Substrate glass pretreatment: Ultrasonic the substrate glass in acetone solution and ethanol solution for 30 minutes respectively;

[0039] (2) SiO 2 Preparation of sol: The sol was synthesized in two steps:

[0040] A) Preparation of acidic dilute SiO by traditional sol-gel method 2 The sol is used as the matrix solution, and the preparation method is as follows: TMOS, methanol and water are used as precursors, mixed according to the molar ratio of 1:30:4, added hydrochloric acid to adjust the pH to 5, stirred evenly, and aged at room temperature for 10 days;

[0041] B) Disperse the nano-silica powder in the ethanol solution; then add the B solution into the A solution according to the weight ratio of the B solution to the A solution of 1:10, and stir it evenly to become a subsequent coating sol;

[0042] (3) Sol-coating mold making: Spin coating is used to coat the surface of the glass substrate to form a 130nm-thick film;

[0043] (4) Film curing: The film i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a monolayer SiO2 antireflection film. The preparation method comprises steps as follows: (1) pretreatment of a glass substrate; (2) preparation of SiO2 sol; (3) sol coating and molding; (4) film curing; and (5) cooling, checking and packaging. The monolayer SiO2 antireflection film has excellent anti-reflection performance, very excellent thixotropy, good self-cleaning performance and excellent chemical stability, and the preparation method is simple.

Description

technical field [0001] The present invention relates to a single layer SiO 2 The invention discloses a method for preparing an anti-reflection film, belonging to the technical field of anti-reflection film preparation. Background technique [0002] The anti-reflection film of the solar silicon cell device is mainly used on the surface of the encapsulation glass to improve the sunlight transmittance of the encapsulation glass and protect the encapsulation glass. The annual output of float ultra-white glass used to encapsulate solar cells is more than 3.5 million square meters per year, and it is increasing year by year. Compared with organic membranes, inorganic membranes have the advantages of excellent thermal and chemical stability, microbial resistance and high mechanical strength, and have great application potential in the fields of catalysis, gas separation, gas treatment, and membrane reactors. [0003] With the continuous development and research of anti-reflection...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C17/25
Inventor 戴红梅葛广凯
Owner 湖南汉瑞新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com