A kind of manufacturing method of microwave film attenuator

Abstract

The invention belongs to the technical field of attenuators, and relates to a manufacturing method of a microwave film attenuator, comprising: processing a dielectric substrate by laser cutting, and forming a through hole at a ground electrode in advance; and realizing the dielectric substrate by vacuum sputtering Metallization on the surface and inside the through hole to form a metallized film structure; use photolithography to form attenuator graphics; electroplating to thicken the conductor circuit; conduct thermal oxidation adjustment of the entire attenuator circuit by heating; use probes The attenuator is used for index testing; the attenuator is divided into independent attenuator graphics by slicing, and the side metallization effect is reflected on the four corners of the attenuator. The invention can realize fine circuit pattern, is beneficial to miniaturization, satisfies occasions of high-frequency application, avoids single-chip manual wrapping and grounding, improves production efficiency, and is beneficial to mass production.

Description

technical field [0001] The invention relates to a microwave attenuator, in particular to a manufacturing method of a microwave film attenuator, and belongs to the technical field of attenuators. Background technique [0002] The attenuator used in the microwave frequency band mainly adopts two transmission line structures: one adopts the suspension line structure, which is mainly used in microwave components such as program-controlled step attenuators and coaxial fixed attenuators; the other adopts microstrip line structure , although it can be individually packaged into a microwave module, it is more used in microwave active components, mainly used to achieve matching between internal circuits of components, improve port standing wave ratio, increase component withstand power, adjust amplifier gain and other functions. The size of the attenuator of the microstrip line structure is small, which requires a small standing wave ratio, good attenuation frequency response and hig...

AI Technical Summary

Problems solved by technology

[0003] The product in the prior art mainly has the defective of two aspects: 1, adopt thick film attenuator

Although thin-film attenuators can realize fine circuit patterns and meet the occasions of high-frequency applications, the wrapping of the ground electrode is an extremely heavy work, with low efficiency and high cost, which is very unfavorable for mass production

Especially for miniaturized attenuators (<1mm2), wrapping grounding becomes difficult to control and realize

Most of the products on the market put the grounding electrode in the subsequent assembly process. The grounding electrode is realized by bonding gold wire or side-wrapped gold belt or gold mesh. The production efficiency is low, the use is inconvenient, and the grounding effect is not good.

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