A method of manufacturing a soft dielectric circuit
A manufacturing method and circuit technology, applied to circuits, chemical/electrolytic methods to remove conductive materials, electrical components, etc., can solve the problem of affecting the quality of circuit substrates, the reliability of wire bonding interconnections, and the impact of circuit substrates. Problems such as poor quality and flatness of circuit substrates
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Embodiment 1
[0023] The invention improves the manufacturing technology of the soft dielectric circuit, adopts full-plate electroplating to thicken to the required thickness of the bonding interconnection, and then adopts photolithography technology to open a process window in the soldering area of the circuit, and the gold layer in the soldering area Thinning to a reliable soldering thickness can meet the different coating thickness requirements of soldering pads and bonding pads on the same circuit, without tinning, and at the same time guarantee the quality of soldering, bonding and placement.
[0024] Such as figure 1 As shown, on the soft dielectric circuit 1, the electroplated gold layer of 2.5 microns on the front side 101 and the electroplated gold layer of 2.5 microns on the back side 102;
[0025] As shown in FIG. 2 , a transmission line 201 is fabricated on the soft dielectric circuit 1 .
[0026] Such as Figure 3-Figure 4 As shown, use photoresist 104 to open a process win...
Embodiment 2
[0029] On the basis of the above embodiments, further, a method for fabricating a soft dielectric circuit, which includes the following steps:
[0030] Step 1: electroplating a gold layer of 2.5 microns on the front and back of the seed layer of the soft dielectric circuit;
[0031] Step 2: using photoetching of the semiconductor integrated circuit manufacturing process to make circuit patterns in time;
[0032] Step 3: using the photolithography technology of the semiconductor integrated circuit manufacturing process to open the process window in the soldering area;
[0033] Step 4: The gold layer in the process window is etched down to 0.5 micron by using wet etching technology of the semiconductor integrated circuit manufacturing process, and the back side is protected by photoresist.
[0034] Further, the step four includes photoetching 0.5 micron of soldering area, photoetching of bonding area of 2.5 micron, photoetching of front transmission line of 2.5 micron, photoe...
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