Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Conductive film, manufacturing method thereof, and sputtering target used in the manufacturing method

A conductive film and manufacturing method technology, applied in the field of sputtering targets, can solve the problems of organic EL panel production yield decline, inability to obtain sufficient heat resistance, small surface roughness, etc., to suppress defects and prevent yield decline , Maintain the effect of reflectivity

Active Publication Date: 2015-08-19
MITSUBISHI MATERIALS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This leads to a decline in the production yield of organic EL panels
In addition, sulfur contained in the process atmosphere sulfides the Ag alloy film, and the sulfided region becomes a defect, which is also a cause of a decrease in yield.
In this way, it has not been possible to obtain an Ag alloy film with sufficient low resistance and high reflectivity, and also has a small surface roughness and high sulfide resistance.
In addition, when a conductive film is used as a reflective film of an LED, a reflective electrode film, etc., it is also required to maintain good reflectivity heat resistance against heat generated by the LED, but sufficient heat resistance cannot be obtained in the conventional Ag alloy film. heat resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive film, manufacturing method thereof, and sputtering target used in the manufacturing method
  • Conductive film, manufacturing method thereof, and sputtering target used in the manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0043] Hereinafter, the evaluation results of examples of the conductive film formed according to the above-mentioned embodiment will be described. First, in order to produce a sputtering target for a conductive film, Ag with a purity of 99.9% by mass or more, at least one of In and Sn with a purity of 99.9% by mass or more, and Sb are used as raw material powders so that they have a predetermined composition. weighing. Next, Ag is melted in a high vacuum or an inert gas atmosphere, and at least any one of In and Sn and Sb are added to the obtained molten metal in predetermined contents. Thereafter, melting is carried out in a vacuum or an inert gas atmosphere to manufacture a smelted ingot of an Ag alloy composed of the following components: the silver alloy contains 0.1 to 1.5 atomic % of at least one of In and Sn, and contains 0.1 to 3.5 The atomic % is Sb, and the rest is composed of Ag and unavoidable impurities.

[0044] Among them, the melting of Ag is carried out in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a conductive film, its manufacturing method, and a sputtering target used in the manufacturing method. The conductive film has the characteristics of low resistance and high reflectivity, and the surface roughness is small, and it has high resistance. vulcanization and heat resistance. The conductive film of the present invention is composed of a silver alloy having the following composition: the silver alloy contains at least any one of In and Sn at 0.1 to 1.5 atomic %, and also contains Sb at 0.1 to 3.5 atomic %, and the remainder is composed of Ag and unavoidable impurities. This conductive film is suitably used as a reflective electrode film for an organic EL element in which a transparent conductive film is laminated on the surface of an organic EL element, and an electroluminescence layer including an organic EL layer is further laminated on the transparent conductive film.

Description

technical field [0001] The present invention relates to a conductive film suitable for reflective electrode films of organic electroluminescence (EL) elements and light emitting diodes (LEDs), wiring films of touch panels, and the like, and a method for producing the same, as well as a sputtering film used for the production method. target. Background technique [0002] Generally, in an organic EL display device, a structure is adopted in which an anode ( anode) and cathode (cathode) organic EL elements are formed in each pixel area. [0003] There are bottom emission methods for extracting light from the transparent substrate side and top emission methods for extracting light from the opposite side of the substrate among the light extraction methods of organic EL elements, and the top emission method with a high aperture ratio is advantageous for high brightness. In the past, in organic EL elements of the top emission method, a reflective electrode film of Al or Al alloy,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/26C22C5/06C23C14/34G06F3/041H01B1/02H01L51/50H05B33/10
CPCH01B1/02H05B33/26C23C14/14C23C14/3414C22C5/06H10K59/80518C23C14/34G06F3/041H05B33/10
Inventor 野中庄平小见山昌三
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com