Production process of high-purity refined trichlorosilane

A technology of trichlorosilane and production process, which is applied in the directions of halogenated silanes and halogenated silicon compounds, etc., can solve the problems of high thermal energy and electric power consumption, large one-time investment cost, large reflux ratio, etc., so as to reduce energy consumption and improve The effect of material utilization

Active Publication Date: 2014-02-05
XINTE ENERGY
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Problems solved by technology

[0004] At present, domestic polysilicon factories generally adopt conventional multi-stage rectification technology to purify trichlorosilane. The number of rectification stages is large, and the height of the rectification tower is high, and the reflux ratio is large, so that the production of polysilicon consumes less heat and electricity. high
And the one-time investment cost is relatively high

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  • Production process of high-purity refined trichlorosilane

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Embodiment Construction

[0035] In order to further understand the present invention, the preferred embodiments of the present invention are described below, but it should be understood that these descriptions are only for further illustrating the features and advantages of the present invention rather than limiting the patent requirements of the present invention.

[0036] According to the present invention, the crude trichlorosilane raw material solution in step a) can be prepared by methods well known to those skilled in the art. In the raw material liquid of crude trichlorosilane, impurities include phosphorus-containing compounds, boron-containing compounds, solid silicon powder particles and metal chlorides, but are not limited thereto. Specific examples of the phosphorus-containing compound are phosphorus trichloride and phosphorus pentachloride, specific examples of the boron-containing compound are boron trichloride and diborane, and specific examples of the metal chloride are ferrous chloride...

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Abstract

The invention relates to the field of rectification and purification; at present, a conventional multi-stage rectification technology is adopted in existing polycrystalline silicon production to purify trichlorosilane, rectification stages are multiple, reflux ratio is large, energy consumption is large and device investment is high; in order to overcome the problems, a technical scheme in the invention adopts a novel process of combining resin adsorption with multi-stage rectification. Coarse trichlorosilane is pre-cooled and cooled, and pumped into an adsorbing device with special divinylbenzene resin by a pump to remove boron and phosphor impurities; and then, rectification is carried out on the adsorbed trichlorosilane liquor in a three-level rectification tower to obtain the high-purity trichlorosilane. The production process disclosed by the invention not only achieves the purpose in the invention, but also has high trichlorosilane purity, lower rectification separator impurity content and can recycle the trichlorosilane for use in disproportionated reaction, so that energy consumption is further lowered, and material utilization rate is improved.

Description

technical field [0001] The invention relates to the technical field of rectification and purification, in particular to a method for adsorption and rectification of crude trichlorosilane and a device thereof. Background technique [0002] Nowadays, the production method of polysilicon is mainly the improved Siemens method. The improved Siemens method is to convert metallurgical grade metal silicon powder into liquid chlorosilane such as trichlorosilane, and then remove the impurities in it by rectification and purification to obtain high-purity refined trichlorosilane. Chlorosilane, and then use high-purity hydrogen to reduce the purified high-purity refined trichlorosilane to polysilicon. [0003] The purity requirements of polysilicon products required by the photovoltaic industry are very high. The content of impurities such as phosphorus, boron and other metals in solar-grade polysilicon is required to be below 1ppb, and the impurity content of electronic-grade polysilic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
Inventor 江庆云
Owner XINTE ENERGY
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