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Preparation method for graphene

A graphene and equipment technology, applied in the field of new material synthesis, can solve the problems of inability to effectively control graphene morphology, complex preparation process, difficult vertical morphology, etc., and achieve good consistency, simple preparation process, and complete crystal structure. Effect

Inactive Publication Date: 2014-02-12
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods currently have some shortcomings, such as complex preparation process, inability to effectively control the graphene morphology, etc., especially difficult to effectively control the vertical morphology

Method used

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  • Preparation method for graphene
  • Preparation method for graphene

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Comparison scheme
Effect test

Embodiment 1

[0031] A kind of preparation method of graphene, comprises the following steps:

[0032] (1) Clean the silicon wafer with ethanol, acetone and deionized water respectively, deposit 0.01mol / L ferric nitrate on the silicon wafer, place the silicon wafer with ferric nitrate upside down on the top of the chemical vapor deposition equipment, attach One side of the ferric nitrate faces the bottom of the chemical vapor deposition equipment and is sealed;

[0033] (2) Introduce 50 sccm of hydrogen into the chemical vapor deposition equipment for 30 minutes, and start heating after the air is exhausted;

[0034] (3) After heating to 900°C, start feeding 1000 sccm of methane and keep it for 30 minutes to grow vertical graphene. After the reaction is over, stop heating, stop feeding methane, cool to room temperature under the protection of hydrogen, and stop feeding Hydrogen, to obtain graphene perpendicular to the surface of the silicon wafer. Finally, the graphene is washed with hydr...

Embodiment 2

[0037] A kind of preparation method of graphene, comprises the following steps:

[0038] (1) Clean the quartz glass plate with ethanol, acetone and deionized water respectively, spin-coat 0.1mol / L cobalt nitrate on the quartz glass plate, and place the quartz glass plate with cobalt nitrate upside down in the chemical vapor deposition equipment. The top, with the side with cobalt nitrate facing the bottom of the chemical vapor deposition equipment, is sealed;

[0039] (2) Introduce 200 sccm of hydrogen into the chemical vapor deposition equipment for 10 minutes, and start heating after the air is exhausted;

[0040] (3) After heating to 1050°C, start feeding 100 sccm of acetylene and keep it for 300 minutes to grow vertical graphene. After the reaction is over, stop heating, stop feeding acetylene, cool to room temperature under the protection of hydrogen, and stop feeding Hydrogen, resulting in graphene perpendicular to the surface of the quartz glass plate. Finally, the gr...

Embodiment 3

[0042] A kind of preparation method of graphene, comprises the following steps:

[0043] (1) Clean the silicon dioxide wafer with ethanol, acetone and deionized water respectively, deposit 1mol / L nickel nitrate on the silicon dioxide wafer, and place the silicon dioxide wafer with nickel nitrate upside down in the chemical vapor deposition equipment The top, with the nickel nitrate attached to the bottom of the chemical vapor deposition equipment, is sealed;

[0044] (2) Introduce 100 sccm of hydrogen gas into the chemical vapor deposition equipment for 20 minutes, and start heating after the air is exhausted;

[0045](3) After heating to 680°C, start feeding 300 sccm of ethane and keep it for 100 minutes to grow vertical graphene. After the reaction is over, stop heating, stop feeding ethane, cool to room temperature under the protection of hydrogen, and stop Hydrogen gas is introduced to obtain graphene perpendicular to the surface of the silicon dioxide sheet. Finally, th...

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Abstract

The invention provides a preparation method for graphene. The method comprises the steps of: providing a clean base plate, depositing or coating a catalyst on the base plate, then inverting the base plate in chemical vapor deposition equipment, making a catalyst attached side face the bottom of the chemical vapor deposition equipment, and conducting sealing; introducing hydrogen into the chemical vapor deposition equipment, maintaining the status for 10-30min, then starting heating; performing heating to 600-1100DEG C, introducing a carbon-containing gas, leading the carbon-containing gas from the chemical vapor deposition equipment bottom to the base plate, maintaining the status for 10-300min, then stopping heating, stopping introducing the carbon-containing gas, performing cooling to room temperature under hydrogen protection, and stopping introducing hydrogen, thus obtaining graphene perpendicular to the base plate. The preparation method for graphene provided by the invention has a simple preparation process, and is easy to realize large-scale industrial production. The prepared graphene is perpendicular to the base plate, has complete crystal structure, high uniformity and good consistency, and can be applied to field emission devices, microfiltration films and the like.

Description

technical field [0001] The invention relates to the field of new material synthesis, in particular to a method for preparing graphene. Background technique [0002] Graphene is a two-dimensional carbon atom crystal discovered by Andre K. Geim of the University of Manchester in 2004. Due to its unique structure and photoelectric properties, it has become a research hotspot in the fields of carbon materials, nanotechnology, condensed matter physics and functional materials, attracting many scientific and technological workers. Single-layer graphene has excellent electrical and thermal conductivity and low thermal expansion coefficient, and its theoretical specific surface area is as high as 2630m 2 / g (A Peigney, Ch Laurent, et al. Carbon, 2001, 39, 507), can be used in effect transistors, electrode materials, composite materials, liquid crystal display materials, sensors, etc. At present, the methods for preparing graphene mainly include graphite exfoliation (Novoselov KS, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/19
Inventor 周明杰袁新生王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD