Method for removing cadmium and thallium from crude indium by vacuum distillation furnace

A distillation furnace and crude indium technology are applied in the field of crude indium impurity removal, can solve the problems of high production cost, complex control conditions, long production cycle and the like, and achieve the effects of low cost, simple and reasonable process and better effect

Inactive Publication Date: 2014-02-12
SHAANXI ZINC IND
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In practical application, this method has the disadvantages of high production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0008] Example

[0009] The process steps of a specific embodiment of the present invention are as follows:

[0010] 1. Put the tray containing ordinary crude indium (purity 98%) into the electric heating vacuum distillation furnace, start the vacuum pump to control the vacuum degree in the distillation furnace at 30Pa, start the heating device, and make the bottom temperature of the tray reach 750℃ , Keep the temperature constant for 120 minutes to volatilize and remove the cadmium impurities in the crude indium, and the removal rate of cadmium reaches 95.3%;

[0011] 2. Increase the temperature of the heating device so that the temperature at the bottom of the tray reaches 1050°C. Keep the temperature at this temperature for 120 minutes to volatilize and remove the thallium impurities in the crude indium. The thallium removal rate reaches 96.5%, and finally a purity of 99.995% is obtained. Refined indium, the first pass rate of indium ingot is 100%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for removing cadmium and thallium from crude indium by a vacuum distillation furnace. The method comprises the technological steps of: playing a tray loaded with an ordinary crude indium raw material into an electric heating type vacuum distillation furnace, starting a vacuum pump to control the vacuum degree in the distillation furnace at 25Pa-50Pa, starting a heating device to make the bottom temperature of the tray reach 700DEG C-750DEG C, and maintaining a constant temperature within the temperature range for 120min so as to volatilize and remove cadmium impurities from the crude indium; and warming the heating device to make the bottom temperature of the tray reach 1000DEG C-1100DEG C, and maintaining a constant temperature within the temperature range for 120min so as to volatilize and remove thallium impurities from the crude indium, thus obtaining refined indium. The method provided by the invention makes full use of the physical property differences between substances, uses a physical method to perform separation, and has the advantages of simple and reasonable process, no pollution, low cost, safety, easy operation, and excellent cadmium and thallium removal effects.

Description

technical field [0001] The invention belongs to the technical field of impurity removal for crude indium in the nonferrous metal smelting industry, and relates to a method for removing cadmium and thallium in crude indium by using a vacuum distillation furnace. Background technique [0002] Metal indium (In) has been widely used in high-tech fields due to its excellent physical and chemical properties such as good acid and wear resistance, light permeability and electrical conductivity. At present, countries all over the world attach great importance to the development and application of indium metal, such as the application of transparent conductive electrodes made of ITO in the plasma TV and liquid crystal display industries, and the development and application of indium-based alloys and semiconductor materials. The materials required by these high technologies are all based on high-purity metal indium, so the purification process of indium is studied, that is, from ordina...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C22B58/00C22B9/02
CPCY02P10/20
Inventor 何学斌王正民陈超周玺苏建军李珍珠牛勤学杨和平周熙
Owner SHAANXI ZINC IND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products