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Processing method of multi-layer ultra-thin diamond blade

A technology of diamond blades and processing methods, which is applied in coatings, electrolytic coatings, cells, etc., can solve the problems of increasing the probability of diamond grit detachment, the decline of blade quality, and the peeling between layers of blades, so as to achieve layered electrodeposition and reduce Equipment input cost and the effect of improving economic benefits

Active Publication Date: 2016-07-20
SHENYANG ACAD OF INSTR SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the distribution of diamond grits of different particle sizes in the entire blade is the same, and some diamond grits with large particle sizes are distributed on both sides, which increases the probability of diamond grit detachment, causes workpiece chipping or chipping, and reduces the use of life
[0004] The existing relevant literature records the processing methods of multi-layer ultra-thin diamond blades, mainly including two kinds, one is to change the concentration and stratification of diamond grit in an electrolyte, but the particle size distribution is not changed; the other is Time-sharing deposition and forming in two electrolytes, but switching between electrolytic cells is prone to interlayer peeling of the blade, resulting in a decline in the quality of the blade

Method used

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  • Processing method of multi-layer ultra-thin diamond blade

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Experimental program
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Embodiment 1

[0031] according to Figures 1~3 The processing method of the multi-layer ultra-thin diamond blade of the present invention is explained in detail, and the electrodeposition forming method is adopted, and the concrete steps are as follows:

[0032] 1) Prepare an electrolyte with 350g / L nickel sulfamate, 10g / L cobalt sulfamate, 10g / L nickel chloride, 20g / L boric acid and 0.6g / L diamond grit with a particle size of 2~10μm. The pH of the solution is 3.5~4.0, and its temperature is maintained at 45~50°C.

[0033] 2) Electrolytic nickel plate is selected for anode substrate 2, degreasing and activated, then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, the stirrer 4 is started to stir the electrolyte 3 at a constant speed, and the rotational speed of the stirrer is adjusted so that the diamond sand particles are The electrolytic cell 5 has a gradient distribution from the bottom of the tank to the notch, and there i...

Embodiment 2

[0039] 1) Prepare an electrolyte with 425g / L nickel sulfamate, 25g / L cobalt sulfamate, 25g / L nickel chloride, 35g / L boric acid and 0.8g / L diamond grit with a particle size of 2~12μm. The pH of the solution is 3.5~4.0, and its temperature is maintained at 50~55°C.

[0040] 2) Electrolytic nickel plate is selected for anode substrate 2, degreasing and activated, then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, the stirrer 4 is started to stir the electrolyte 3 at a constant speed, and the rotational speed of the stirrer is adjusted so that the diamond sand particles are The electrolytic cell 5 has a gradient distribution from the bottom of the tank to the notch, and there is no diamond sand deposition at the bottom of the tank.

[0041] 3) The current value density is set to 0.4A / dm 2 , the cathode substrate 1 is made of an austenitic stainless steel plate after surface polishing, degreasing, and then the catho...

Embodiment 3

[0044] 1) Prepare an electrolyte with 400g / L nickel sulfamate, 20g / L cobalt sulfamate, 20g / L nickel chloride, 30g / L boric acid and 0.4g / L diamond grit with a particle size of 2~20μm. The pH of the solution is 3.5~4.0, and its temperature is maintained at 45~50°C.

[0045] 2) Electrolytic nickel plate is selected for anode substrate 2, degreasing and activated, then the anode substrate 2 is connected to the positive electrode of the power supply and placed in the electrolyte, the stirrer 4 is started to stir the electrolyte 3 at a constant speed, and the rotational speed of the stirrer is adjusted so that the diamond sand particles are The electrolytic cell 5 has a gradient distribution from the bottom of the tank to the notch, and there is no diamond sand deposition at the bottom of the tank.

[0046] 3) The current value density is set to 0.3A / dm 2 , the cathode substrate 1 is made of an austenitic stainless steel plate after surface polishing, degreasing, and then the catho...

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Abstract

A method for processing multi-layer ultra-thin diamond blades, using electrodeposition forming method, using austenitic stainless steel plate with surface polishing treatment as cathode substrate; electrolytic nickel plate as anode substrate; sulfamate type with low internal stress is selected Electrolyte, including nickel sulfamate, nickel chloride, cobalt sulfamate, boric acid, and diamond grit with a particle size of 2 μm to 30 μm; a stirrer with adjustable speed is used; the two plates are placed in the electrolyte, and the cathode substrate is connected to the negative electrode of the power supply , the anode substrate is connected to the positive pole of the power supply, the stirrer rotates at a certain speed, nickel ions and diamond grains co-deposit on the cathode substrate, in the same electrolyte, by adjusting the current value and the position of the cathode substrate in the electrolytic cell in different time periods Multi-layer composite deposition layers with different particle sizes and concentrations can be obtained. After demoulding, they are processed to the specified size to obtain the required multi-layer structure ultra-thin diamond blade. The invention has the advantages of simple process, good operability, low cost, good processing quality, good binding force, long service life and the like.

Description

technical field [0001] The invention relates to the field of diamond tool manufacturing, in particular to a processing method for a multi-layer ultra-thin diamond blade. Background technique [0002] Silicon wafers have the characteristics of high hardness, low hardness, high melting point, and low heat transfer, and are widely used in IC (semiconductor components, integrated circuit) products. The wiring width of the silicon wafer is required to be narrower and narrower, and the width of the reserved dicing track is also getting narrower and narrower. The width of the existing silicon wafer dicing track can reach 50~100μm. Ultra-thin diamond blades have become the mainstream silicon wafer slicing tools today due to their thin blades, high precision, high strength, good rigidity, and low internal stress. [0003] In recent years, my country's IC product manufacturing industry has developed rapidly, and the demand for ultra-thin diamond blades has rapidly expanded. However, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D15/00C25D21/10C25D21/12C25D3/56
Inventor 刘继文刘谦肖跃军韩新博王涛钱江张大林王雪宋林红
Owner SHENYANG ACAD OF INSTR SCI