Method for controlling crystallization velocity during silicon ingot casting

A technology of silicon ingot casting and crystallization speed, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of inability to accurately control the crystallization of silicon liquid, and achieve the effect of stabilizing the crystallization quality of liquid silicon and avoiding hysteresis.

Active Publication Date: 2014-02-26
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method of controlling the heater power by checking the temperature in the thermal field at the top temperature measurement point can accurately check the temperature change in the thermal field when the ingot feeding amount or the crucible manufacturer used changes, so that the temperature can be adjusted by adjusting the temperature. Adjust the variation of the heater. However, if the feeding amount of the ingot furnace is fixed and the manufacturer of the crucible is fixed, the power of the heater is controlled by controlling the temperature of the temperature measurement point. Very good precise control of silicon liquid crystallization

Method used

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  • Method for controlling crystallization velocity during silicon ingot casting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Step 1: The louvers are opened at an angle of 28 degrees, the bottom of the silicon liquid starts to dissipate heat, and the temperature at the top temperature measuring point 51 is maintained to exceed the melting point of the silicon liquid, so that the top of the silicon liquid does not crystallize, and the time is 60 minutes;

[0048] The second step: on the basis of the first step, continue to open the louvers at a constant speed to an angle of 38 degrees, and set the temperature at the top temperature measurement point 51 to be slightly lowered by 3°C for 60 minutes;

[0049] In the third step, the output power of the ingot casting furnace is controlled to be 59kw, the opening of the louvers is 48 degrees, and the time is 300 minutes;

[0050] In the fourth step, the output power of the ingot casting furnace is controlled to be 64kw, the opening of the louvers is 63 degrees, and the time is 240 minutes;

[0051] In the fifth step, the output power of the ingot cas...

Embodiment 2

[0056] Step 1: The louvers are opened at an angle of 22 degrees, the bottom of the silicon liquid starts to dissipate heat, and the temperature at the top temperature measuring point 51 is maintained above the melting point of the silicon liquid to keep the top of the silicon liquid from crystallization for 30 minutes;

[0057] The second step: on the basis of the first step, continue to open the louvers at a constant speed to an angle of 32 degrees, and set the temperature at the top temperature measuring point 51 to slightly lower by 3°C for 30 minutes;

[0058] In the third step, the output power of the ingot casting furnace is controlled to be 51kw, the opening of the louvers is 42 degrees, and the time is 240 minutes;

[0059] In the fourth step, the output power of the ingot casting furnace is controlled to be 56kw, the opening of the louvers is 57 degrees, and the time is 240 minutes;

[0060] In the fifth step, the output power of the ingot casting furnace is controlle...

Embodiment 3

[0065] Step 1: The louvers are opened at an angle of 27 degrees, the bottom of the silicon liquid starts to dissipate heat, and the temperature at the top temperature measuring point 51 is maintained above the melting point of the silicon liquid to keep the top of the silicon liquid from crystallization for 40 minutes;

[0066] Step 2: On the basis of the first step, continue to open the louvers at a constant speed to an angle of 37 degrees, and set the temperature at the top temperature measuring point 51 to be lowered by 2°C for 40 minutes;

[0067] In the third step, the output power of the ingot casting furnace is controlled to be 57kw, the opening of the louvers is 47 degrees, and the time is 270 minutes;

[0068] In the fourth step, the output power of the ingot casting furnace is controlled to be 62kw, the opening of the louvers is 62 degrees, and the time is 270 minutes;

[0069] In the fifth step, the output power of the ingot casting furnace is controlled to be 67kw,...

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Abstract

The invention discloses a method for controlling crystallization velocity during silicon ingot casting. The method comprises the step of crystallizing by adopting an ingot casting furnace, wherein a crystallization process comprises a plurality of process control steps, and in at least one process control step, the ingot casting furnace operates according to preset ingot casting furnace output power so as to control the heat quantity in a heat field of the ingot casting furnace. The crystallization velocity during silicon ingot casting in the photovoltaic industry is controlled by applying the technical scheme disclosed by the invention, the existing PID (Proportion-Integration-Differentiation) controller two-step calculation method is changed, and the power is set directly in a controller, so that the hysteresis of the two-step calculation method is avoided; the heat quantity required for stable crystal growth in the heat filed is controlled through presetting the power, so that the crystallization velocity of silicon liquid is controllable, the crystallization quality of the silicon liquid is stabilized, and the hysteresis caused by output power calculation due to temperature control is avoided.

Description

technical field [0001] The invention relates to the field of photovoltaic manufacturing, in particular to a method for controlling the crystallization rate in silicon ingot casting. Background technique [0002] At present, the photovoltaic industry is developing rapidly. There are many types of thermal fields in polycrystalline ingot furnaces. Different thermal fields are designed for specific casting methods, and there are great differences in the casting process of polycrystalline silicon ingots. However, no matter how the ingot casting process is changed and adjusted, the five processes of ingot casting have no major changes, namely: heating, melting, crystal growth, annealing, and cooling five steps. [0003] Take Jinggong 500N ingot casting furnace as an example, such as figure 1 As shown, it includes: heat sink 10, made of graphite, has good thermal conductivity, is used to carry silicon material, quartz crucible for loading silicon material, graphite side guard plat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 李孟方军杰周秉林魏景拓
Owner YINGLI GRP
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