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Space three-dimensional magnetic field detection sensor

A technology for detecting sensors and three-dimensional magnetic fields, which is applied in the field of sensors, can solve problems such as unfavorable miniaturization or integration, low sensitivity, temperature drift, etc., and achieve the effect of facilitating miniaturization and integration, improving sensitivity, and saving space

Active Publication Date: 2016-01-13
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For the method disclosed in Chinese patent CN200810209819.3, a silicon thin film transistor is used to measure the magnetic field, but the sensor made by this method uses a single silicon thin film transistor to measure the magnetic field, which makes the sensor greatly affected by external factors such as temperature, and is prone to temperature Drift phenomenon, and low sensitivity;
[0008] For the two-dimensional magnetic vector magnetosensitive device disclosed in Chinese patent application CN85103006, a magnetosensitive transistor is applied. However, this type of magnetic sensitive device disclosed in this document can only measure a two-dimensional magnetic field. When it is necessary to measure a three-dimensional magnetic field , this type of magnetic sensitive device cannot complete the work smoothly; and the collector, base and emitter of the magnetic sensitive transistor used in this type of magnetic sensitive device are all arranged on the same side of the silicon chip, so that the device Occupies a large space, which is not conducive to miniaturization or integration;
[0009] In addition, since both magneto-sensitive transistors (bipolar transistors) and thin-film transistors (field-effect transistors) have advantages and disadvantages, there is no magnetic field detection sensor that can simultaneously have the advantages of both transistors in the prior art

Method used

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  • Space three-dimensional magnetic field detection sensor
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  • Space three-dimensional magnetic field detection sensor

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0127] Step 1: Double-sided growth of 300nm SiO on a single crystal silicon substrate with a thickness of 400μm by thermal oxidation method 2 layer;

[0128] Step 2: Using LPCVD (low pressure chemical vapor deposition) to deposit SiO on the lower surface of the single crystal silicon substrate 2 200nm Si grown on one side of the layer 3 N 4 , one photolithography, the depth of photolithography on the surface of the single crystal silicon substrate is 300nm, and four collector windows are formed;

[0129] Step 3: Use the dense phosphorus diffusion process in the collector area window to make a highly doped collector area to form a collector area, dry etching, and remove SiO on the upper surface of the single crystal silicon substrate 2 layer;

[0130] Step 4: Using thermal oxidation method to grow 300nm SiO on the upper surface of the single crystal silicon substrate 2 layer, covering the collector region, and performing secondary photolithography, the depth of photolithog...

Embodiment 1

[0146] For Embodiment 1, in the two-dimensional magnetic field detection in the horizontal direction, the A-axis direction and the B-axis direction are detected by two silicon magnetosensitive transistors respectively, and the magnetic sensitivity is the sum of the magnetic sensitivity of the two silicon magnetosensitive transistors, and the sensitivity is significantly improved; A silicon magnetosensitive transistor constitutes a differential structure, and the temperature drift is the difference between two silicon magnetosensitive transistors, which can realize temperature drift-free measurement;

[0147] The Z direction (the direction perpendicular to the chip) is measured by thin film transistors. The Hall output terminals of two thin film transistors are connected in series, and the sensitivity is twice that of a single thin film transistor; the Hall output terminals of four thin film transistors are connected in series, and the sensitivity is higher than a single thin fil...

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Abstract

The invention discloses a spatial 3D (Three-dimensional) magnetic field detection sensor. The spatial 3D magnetic field detection sensor comprises a single crystal silicon substrate, a first silicon magnetic-sensing transistor, a second silicon magnetic-sensing transistor, a third silicon magnetic-sensing transistor, a fourth silicon magnetic-sensing transistor, a first TFT (Thin Film Transistor), a second TFT, a third TFT and a fourth TFT. The spatial 3D magnetic field detection sensor provided by the invention has high sensitivity, is not affected by temperature drift and is simultaneously beneficial for integration and minimization.

Description

technical field [0001] The invention belongs to the technical field of sensors, in particular to a three-dimensional magnetic field detection sensor in space. Background technique [0002] The magneto-sensitive transistor is a magnetoelectric conversion device with a long base bipolar structure. Magnetotransistor, also known as magnetotransistor or magnetic triode, is a new type of semiconductor magnetoelectric conversion device developed in the 1970s, mainly used for magnetic detection, non-contact switch and proximity switch. [0003] Thin-film transistor (English name is Thin-filmtransistor, referred to as TFT) is one of the types of field effect transistors, which are manufactured by depositing various thin films on the substrate, such as semiconductor active layer, dielectric layer and metal electrode layer. Thin film transistor is the key device of liquid crystal display, which plays a very important role in the working performance of the display device. [0004] The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/22
Inventor 赵晓锋温殿忠宋宇吕美薇
Owner HEILONGJIANG UNIV